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SMX LM386 LOW VOLTAGE AUDIO POWER AMPLIFIER same as Unisonic Technologies LM386, National Semiconductor LM386, National Semiconductor LM386N-4, National Semiconductor LM386N-3, National Semiconductor LM386N-1, National Semiconductor LM386N, National Semiconductor LM386MX-1, National Semiconductor LM386MMX-1, National Semiconductor LM386MM-1, National Semiconductor LM386MM-1, National Semiconductor LM386MM-1, National Semiconductor LM386M-1, Unisonic Technologies UTCLM386, Wing Shing Computer Components LM386N-1 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire.
National Semiconductor LM386, Unisonic Technologies UTCLM386, Wing Shing Computer Components LM386N-1
SMX LM386 LOW VOLTAGE AUDIO POWER AMPLIFIER same as Unisonic Technologies LM386, National Semiconductor LM386, National
Semiconductor LM386N-4, National Semiconductor LM386N-3, National Semiconductor LM386N-1, National Semiconductor LM386N, National
Semiconductor LM386MX-1, National Semiconductor LM386MMX-1, National Semiconductor LM386MM-1, National Semiconductor LM386MM-1, National
Semiconductor LM386MM-1, National Semiconductor LM386M-1, Unisonic Technologies UTCLM386, Wing Shing Computer Components LM386N-1
manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete
semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of
Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and
integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or
copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on
board, assembled via flip chip or chip and wire. National Semiconductor LM386, Unisonic Technologies UTCLM386, Wing Shing Computer
Components LM386N-1 REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=LM386">INVENTORY
/cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXLM386&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE
MAP semiconix semiconductor - where the future is today - gold chip technology SMX LM386 - BARE DIE GOLD CHIP TECHNOLOGY™ LOW VOLTAGE AUDIO
POWER AMPLIFIER FEATURES APPLICATIONS LOW VOLTAGE AUDIO POWER AMPLIFIER Battery operation Minimum external parts Wide supply voltage range:
4V-12V or 5V-18V; Low quiescent current drain: 4mA Voltage gains from 20 to 200 Ground referenced input Self-centering output quiescent
voltage Low distortion: 0.2% (AV=20, VS=6V, RL= 8Ohm, PO=125mW, f=1kHz). In DIE form, this device is an excellent selection for many chip
and wire HYBRID CIRCUITS. LM386 LM386 LOW VOLTAGE AUDIO POWER AMPLIFIER SMXLM386 LOW VOLTAGE AUDIO POWER AMPLIFIER - PRODUCT DESCRIPTION
The SMX LM386 is power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to keep external
part count low, but the addition of external resistor and capacitor between pins 1 and 8 will increase the gain to any value from 20 to
200. The inputs are ground referenced while the output automatically biases to one-half the supply voltage. The quiescent power drain is 24
milliwatts when operating from a volt supply, making the USM386 ideal for battery operation. HIGH RELIABILITY BARE DIE AND SYSTEM IN
PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of
mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology.
COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less
expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the
protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions
and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are
extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now
offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die
reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high
reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING
PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes.
All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts
and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film
resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions.
SCHEMATIC DIAGRAM LM386 Unisonic Technologies LM386 LOW VOLTAGE AUDIO POWER AMPLIFIER LM386 MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS
Supply Voltage Vcc 15 V Power Dissipation Pd 0.66 W Input Voltage Vin ±0.4 V Storage Temperature Tstg -65 to +150 °C Operating Temperature
Top 0 to +70 °C Junction Temperature Tj 150 °C ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed
absolute maximum ratings may cause permanent damage to the device. LM386 ELECTRICAL CHARACTERISTIC TA = +25°C, unless otherwise specified
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Operating Supply Voltage Vcc 4 12 V Quiescent Current VS=6V, VIN=0 IQ 4 mA Output Power
VS=6V, RL=8W, THD=10% POUT 250 325 mV Voltage Gain Pins 1and 8 Open 10 µF from Pin 1to 8 AV 26 46 dB dB Bandwidth VS=6V, Pins 1and 8 Open
BW 300 KHz Total Harmonic Distortion VS=6V, RL= 8W, POUT=125mW f=1kHz, Pins 1and 8 Open THD 0.2 % Power Supply Rejection Ratio VS=6V,
f=1kHz, CBYPASS=10 µF Pins 1and 8 Open, Referred to Output PSSR 50 dB Input Resistance RIN 50 kW Input Bias Current VS=6V, Pins 2 and 3
Open IBAS 250 nA (NOTE 1)All voltages are measured with respect to the ground pin, unless otherwise specified (NOTE 2)Maximum Ratings
indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but
do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test
conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are
not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance. (NOTE 3)For
operation in ambient temperatures above 25deg.C, the device must be derated based on a 150deg.C maximum junction temperature. SPICE MODEL
CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization Silicon 10
55.118 x 62.992 ±1 [1.4 x 1.6] 3.543x3.543 Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die
attach. LM386 DIE LAYOUT - MECHANICAL SPECIFICATIONS LM386 DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mils) X(mm) Y(mils) 1
GAIN 4.724 0.12 38.386 2 -INPUT 4.724 0.12 26.181 3 +INPUT 4.724 0.12 3.937 4A GND 21.654 0.55 3.937 4B GND 23.622 0.6 15.354 5 VOUT 23.622
0.6 39.961 6 VCC 29.528 0.75 55.315 7 BYPASS 17.323 0.44 55.315 8 GAIN 4.724 0.12 55.315 SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION
NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe
die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be
any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be
used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE:
Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum
bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow
temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum
intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note
AN-SMX-000. LM386 STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USMLM386 100pc -WP $3.20 Products sold
for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be
established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom
configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail
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SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to
revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within
support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment,
submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES
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