SMX LM386 LOW VOLTAGE AUDIO POWER AMPLIFIER same as Unisonic Technologies LM386, National Semiconductor LM386, National Semiconductor LM386N-4, National Semiconductor LM386N-3, National Semiconductor LM386N-1, National Semiconductor LM386N, National Semiconductor LM386MX-1, National Semiconductor LM386MMX-1, National Semiconductor LM386MM-1, National Semiconductor LM386MM-1, National Semiconductor LM386MM-1, National Semiconductor LM386M-1, Unisonic Technologies UTCLM386, Wing Shing Computer Components LM386N-1 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. National Semiconductor LM386, Unisonic Technologies UTCLM386, Wing Shing Computer Components LM386N-1 SMX LM386 LOW VOLTAGE AUDIO POWER AMPLIFIER same as Unisonic Technologies LM386, National Semiconductor LM386, National Semiconductor LM386N-4, National Semiconductor LM386N-3, National Semiconductor LM386N-1, National Semiconductor LM386N, National Semiconductor LM386MX-1, National Semiconductor LM386MMX-1, National Semiconductor LM386MM-1, National Semiconductor LM386MM-1, National Semiconductor LM386MM-1, National Semiconductor LM386M-1, Unisonic Technologies UTCLM386, Wing Shing Computer Components LM386N-1 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. National Semiconductor LM386, Unisonic Technologies UTCLM386, Wing Shing Computer Components LM386N-1 REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=LM386">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXLM386&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX LM386 - BARE DIE GOLD CHIP TECHNOLOGY™ LOW VOLTAGE AUDIO POWER AMPLIFIER FEATURES APPLICATIONS LOW VOLTAGE AUDIO POWER AMPLIFIER Battery operation Minimum external parts Wide supply voltage range: 4V-12V or 5V-18V; Low quiescent current drain: 4mA Voltage gains from 20 to 200 Ground referenced input Self-centering output quiescent voltage Low distortion: 0.2% (AV=20, VS=6V, RL= 8Ohm, PO=125mW, f=1kHz). In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS. LM386 LM386 LOW VOLTAGE AUDIO POWER AMPLIFIER SMXLM386 LOW VOLTAGE AUDIO POWER AMPLIFIER - PRODUCT DESCRIPTION The SMX LM386 is power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to keep external part count low, but the addition of external resistor and capacitor between pins 1 and 8 will increase the gain to any value from 20 to 200. The inputs are ground referenced while the output automatically biases to one-half the supply voltage. The quiescent power drain is 24 milliwatts when operating from a volt supply, making the USM386 ideal for battery operation. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions. SCHEMATIC DIAGRAM LM386 Unisonic Technologies LM386 LOW VOLTAGE AUDIO POWER AMPLIFIER LM386 MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Supply Voltage Vcc 15 V Power Dissipation Pd 0.66 W Input Voltage Vin ±0.4 V Storage Temperature Tstg -65 to +150 °C Operating Temperature Top 0 to +70 °C Junction Temperature Tj 150 °C ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. LM386 ELECTRICAL CHARACTERISTIC TA = +25°C, unless otherwise specified PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Operating Supply Voltage Vcc 4 12 V Quiescent Current VS=6V, VIN=0 IQ 4 mA Output Power VS=6V, RL=8W, THD=10% POUT 250 325 mV Voltage Gain Pins 1and 8 Open 10 µF from Pin 1to 8 AV 26 46 dB dB Bandwidth VS=6V, Pins 1and 8 Open BW 300 KHz Total Harmonic Distortion VS=6V, RL= 8W, POUT=125mW f=1kHz, Pins 1and 8 Open THD 0.2 % Power Supply Rejection Ratio VS=6V, f=1kHz, CBYPASS=10 µF Pins 1and 8 Open, Referred to Output PSSR 50 dB Input Resistance RIN 50 kW Input Bias Current VS=6V, Pins 2 and 3 Open IBAS 250 nA (NOTE 1)All voltages are measured with respect to the ground pin, unless otherwise specified (NOTE 2)Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance. (NOTE 3)For operation in ambient temperatures above 25deg.C, the device must be derated based on a 150deg.C maximum junction temperature. SPICE MODEL CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization Silicon 10 55.118 x 62.992 ±1 [1.4 x 1.6] 3.543x3.543 Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. LM386 DIE LAYOUT - MECHANICAL SPECIFICATIONS LM386 DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mils) X(mm) Y(mils) 1 GAIN 4.724 0.12 38.386 2 -INPUT 4.724 0.12 26.181 3 +INPUT 4.724 0.12 3.937 4A GND 21.654 0.55 3.937 4B GND 23.622 0.6 15.354 5 VOUT 23.622 0.6 39.961 6 VCC 29.528 0.75 55.315 7 BYPASS 17.323 0.44 55.315 8 GAIN 4.724 0.12 55.315 SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. LM386 STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USMLM386 100pc -WP $3.20 Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMXLM386&idx=10">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission. Valid XHTML 1.0 Transitional by http://validator.w3.org

REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP

   
semiconix semiconductor - where the future is today - gold chip technology SMX LM386 - BARE DIE
GOLD CHIP TECHNOLOGY™ LOW VOLTAGE AUDIO POWER AMPLIFIER

FEATURES APPLICATIONS LOW VOLTAGE AUDIO POWER AMPLIFIER
Battery operation
Minimum external parts
Wide supply voltage range: 4V-12V or 5V-18V;
Low quiescent current drain: 4mA
Voltage gains from 20 to 200
Ground referenced input
Self-centering output quiescent voltage
Low distortion: 0.2% (AV=20, VS=6V, RL= 8Ohm, PO=125mW, f=1kHz).

In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS.









LM386 LM386 LOW VOLTAGE AUDIO POWER AMPLIFIER

SMXLM386 LOW VOLTAGE AUDIO POWER AMPLIFIER - PRODUCT DESCRIPTION
The SMX LM386 is power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to keep external part count low, but the addition of external resistor and capacitor between pins 1 and 8 will increase the gain to any value from 20 to 200. The inputs are ground referenced while the output automatically biases to one-half the supply voltage. The quiescent power drain is 24 milliwatts when operating from a volt supply, making the USM386 ideal for battery operation.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS
Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions.


SCHEMATIC DIAGRAM
LM386 Unisonic Technologies LM386 LOW VOLTAGE AUDIO POWER AMPLIFIER

LM386 MAXIMUM RATINGS
PARAMETERSYMBOLVALUEUNITS
Supply VoltageVcc15V
Power DissipationPd0.66W
Input VoltageVin±0.4V
Storage Temperature Tstg-65 to +150°C
Operating TemperatureTop0 to +70°C
Junction TemperatureTj150°C
ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

LM386 ELECTRICAL CHARACTERISTIC
TA = +25°C, unless otherwise specified
PARAMETERTEST CONDITIONSSYMBOLMINTYPMAXUNITS
Operating Supply VoltageVcc412V
Quiescent CurrentVS=6V, VIN=0IQ4mA
Output PowerVS=6V, RL=8W, THD=10%POUT250325mV
Voltage GainPins 1and 8 Open 10 µF from Pin 1to 8AV26 46dB dB
BandwidthVS=6V, Pins 1and 8 OpenBW300KHz
Total Harmonic DistortionVS=6V, RL= 8W, POUT=125mW f=1kHz, Pins 1and 8 OpenTHD0.2%
Power Supply Rejection RatioVS=6V, f=1kHz, CBYPASS=10 µF Pins 1and 8 Open, Referred to OutputPSSR50dB
Input ResistanceRIN50kW
Input Bias CurrentVS=6V, Pins 2 and 3 OpenIBAS250nA
(NOTE 1)All voltages are measured with respect to the ground pin, unless otherwise specified
(NOTE 2)Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance.
(NOTE 3)For operation in ambient temperatures above 25deg.C, the device must be derated based on a 150deg.C maximum junction temperature.

SPICE MODEL
Spice model pending.
 
CROSS REFERENCE PARTS
National Semiconductor LM386, Unisonic Technologies UTCLM386, Wing Shing Computer Components LM386N-1

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Die size
mils [mm]
Bonding pads Backside metallization
Silicon 10 55.118 x 62.992 ±1
[1.4 x 1.6]
3.543x3.543 Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach.

LM386 DIE LAYOUT - MECHANICAL SPECIFICATIONSLM386 DIE LAYOUT - MECHANICAL SPECIFICATIONS
PAD #FUNCTIONX(mils)X(mm)Y(mils)
1GAIN4.7240.1238.386
2-INPUT4.7240.1226.181
3+INPUT4.7240.123.937
4AGND21.6540.553.937
4BGND23.6220.615.354
5VOUT23.6220.639.961
6VCC29.5280.7555.315
7BYPASS17.3230.4455.315
8GAIN4.7240.1255.315

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.

LM386 STANDARD PRODUCTS PRICE LIST
USM PART #MINIMUM ORDER QUANTITYWaffle PacksU/P($)
USMLM386100pc-WP$3.20
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting SEMICONIX SEMICONDUCTOR technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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