SMX LM555 TIMER same as National Semiconductor LM555, Fairchild Semiconductor LM555, Fairchild Semiconductor LM555CN, Fairchild Semiconductor LM555CM, Fairchild Semiconductor LM555CMX, Harris Semiconductor LM555N, Harris Semiconductor LM555N, Intersil LM555CN, Intersil LM555C, National Semiconductor LM555H-MLS, National Semiconductor LM555CMX, National Semiconductor LM555CMX, National Semiconductor LM555CMX, National Semiconductor LM555H/883, National Semiconductor LM555J/883, National Semiconductor LM555CN, National Semiconductor LM555CN, National Semiconductor LM555CN, National Semiconductor LM555H-MLS, National Semiconductor LM555H-MLS, National Semiconductor LM555J/883, National Semiconductor LM555H/883, National Semiconductor LM555H/883, National Semiconductor LM555J/883, National Semiconductor LM555CMMX, National Semiconductor LM555 MWC, National Semiconductor LM555 MWC, National Semiconductor LM555 MDC, National Semiconductor LM555 MDC, National Semiconductor LM555 MDC, National Semiconductor LM555 MD8, National Semiconductor LM555 MD8, National Semiconductor LM555 MD8, National Semiconductor LM555 MWC, National Semiconductor LM555C, National Semiconductor LM555CMMX, National Semiconductor LM555CMMX, National Semiconductor LM555CMM, National Semiconductor LM555CMM, National Semiconductor LM555CMM, National Semiconductor LM555CM, National Semiconductor LM555CM, National Semiconductor LM555CM, National Semiconductor LM555 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Fairchild Semiconductor LM555, Harris Semiconductor LM555N, Intersil LM555C, National Semiconductor LM555 SMX LM555 TIMER same as National Semiconductor LM555, Fairchild Semiconductor LM555, Fairchild Semiconductor LM555CN, Fairchild Semiconductor LM555CM, Fairchild Semiconductor LM555CMX, Harris Semiconductor LM555N, Harris Semiconductor LM555N, Intersil LM555CN, Intersil LM555C, National Semiconductor LM555H-MLS, National Semiconductor LM555CMX, National Semiconductor LM555CMX, National Semiconductor LM555CMX, National Semiconductor LM555H/883, National Semiconductor LM555J/883, National Semiconductor LM555CN, National Semiconductor LM555CN, National Semiconductor LM555CN, National Semiconductor LM555H-MLS, National Semiconductor LM555H-MLS, National Semiconductor LM555J/883, National Semiconductor LM555H/883, National Semiconductor LM555H/883, National Semiconductor LM555J/883, National Semiconductor LM555CMMX, National Semiconductor LM555 MWC, National Semiconductor LM555 MWC, National Semiconductor LM555 MDC, National Semiconductor LM555 MDC, National Semiconductor LM555 MDC, National Semiconductor LM555 MD8, National Semiconductor LM555 MD8, National Semiconductor LM555 MD8, National Semiconductor LM555 MWC, National Semiconductor LM555C, National Semiconductor LM555CMMX, National Semiconductor LM555CMMX, National Semiconductor LM555CMM, National Semiconductor LM555CMM, National Semiconductor LM555CMM, National Semiconductor LM555CM, National Semiconductor LM555CM, National Semiconductor LM555CM, National Semiconductor LM555 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Fairchild Semiconductor LM555, Harris Semiconductor LM555N, Intersil LM555C, National Semiconductor LM555 REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=LM555">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXLM555&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX LM555 - BARE DIE GOLD CHIP TECHNOLOGY™ TIMER FEATURES APPLICATIONS TIMER Direct replacement for SE555/NE555 Timing from micro-seconds through hours Operates in both astable and mono- stable modes Adjustable duty cycle Output can source or sink 200mA Output and supply TTL compatible Temperature stability better than 0.005% per C Normally on and normally off output In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS LM555 LM555 TIMER SMXLM555 TIMER - PRODUCT DESCRIPTION The SMX LM555 is a highly stable device for generating accurate time delays or oscillation. Additional terminals are provided for triggering or resettin desired. In the time delay mode of operation, the time is precisely controlled by one external resistor and capacitor. For a stable operation as an oscillator, the free running frequency and duty cycle are accurately controlled with two external resistors and one capacitor.The circuit may retriggered and reset on falling waveforms, and the output circuit can source or sink up to 200mA or drive TTL circuits. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions. SCHEMATIC DIAGRAM LM555 National Semiconductor LM555 TIMER LM555 MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Supply Voltages Vcc 18 V Power Disipation(Note3) LM555CM, LM555CN LM555CMM Pd 1180 603 mW Operating Temperature Ranges LM555C Top 0 to +70 °C Storage Temperature Range Tstg -65 to +150 °C ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. LM555 ELECTRICAL CHARACTERISTIC (Note 1,2 TA=25°C,VCC=+5V to+15V unless otherwise specificed) PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Supply Voltage 4.5 16 V Supply Curent VCC=5V R=¥ VCC=5V RL=¥ (Low State)Note4 3 10 6 15 mA Timing Error, Monostable Initial Accuracy Drift with Temperature Accuracy overTemperature Drift with Supply RA=1k to 100kΩ C=0.1µF(Note 5) 1 50 1.5 0.1 % ppm/°C % %/V Timing Error,Astable Initial Accuracy Drift with Temperature Accuracy overTemperature Drift with Supply RA,RB=1k to 100kW C=0.1µF(Note 5) 2.25 150 3.0 0.30 % ppm/°C % %/V Treshold Voltage 0.667 x VCC Trigger Voltage VCC=15V VCC=5V 5 1.67 V Trigger Current 0.4 0.5 1 µA Reset Voltage 0.4 0.5 1 V Reset Current 0.1 0.4 mA Threshold Current Note6 0.1 0.25 µA Control Voltage Level VCC=15V VCC=5V 9 2.6 10 3.33 11 4 V Pin Discharge Leakage Output High 1 100 nA Pin Discharge Sat Output Low Output Low VCC=15V,IZ=15mA VCC=4.5V,IZ=4.5mA 180 80 200 mV Output Voltage Drop (Low) VCC=15V ISINK=10mA ISINK=50mA ISINK=100mA ISINK=200mA VCC=5V ISINK=8mA ISINK=5mA 0.1 0.4 2 2.5 0.25 0.25 0.75 2.5 0.35 V Output Voltage Drop (High) ISOURCE=200mA VCC=15V ISINK=100mA ,VCC=15V VCC=5V 12.75 2.75 12.5 13.3 3.3 V Rise Time of Output 100 ns Fall Time of Output 100 ns (NOTE 1)All voltages are measured with respect to the ground pin, unless otherwise specified. (NOTE 2)Absolute Maximum Ratings indicate limits be yond which damage to the device may occur.Operating Ratings indicate conditions for which thedevice is functional,but do not guarantee specific performance limits.Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits.This assumes that the deviceis within the Operating Ratings.Specifications are not guaranteed for parameters where no limit is given,however,the typical value is a good indication of device performance. (NOTE 3)For operating at elevated temperatures the device must be derated above 25°C based on a+150 °C maximum junction temperature and a thermal resistance of 106 °C/W (DIP),170 °C/W (S0-8),and 204 °C/W (MSOP) junction to ambient. (NOTE 4)Supply current when output high typically 1mA less at Vcc=5V (NOTE 5)Tested at Vcc=5V and Vcc=15V SPICE MODEL CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization Silicon 10 40.157 x 42.126 ±1 [1.02 x 1.07] min 3.74 x3.74 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. LM555 DIE LAYOUT - MECHANICAL SPECIFICATIONS LM555 DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mils) X(mm) Y(mils) 1 GND 3.74 0.095 12.401 2 Trigger 4.527 0.115 4.921 3 Out 23.228 0.59 4.921 4 Reset 31.889 0.81 17.716 5 Control 30.708 0.78 32.677 6 Threshold 31.889 0.81 25 7 Discharge 16.535 0.42 35.236 8 Vcc 4.921 0.125 19.291 SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. LM555 STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USMLM555 100pc -WP $3.20 Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMXLM555&idx=12">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission. Valid XHTML 1.0 Transitional by http://validator.w3.org

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semiconix semiconductor - where the future is today - gold chip technology SMX LM555 - BARE DIE
GOLD CHIP TECHNOLOGY™ TIMER

FEATURES APPLICATIONS TIMER
Direct replacement for SE555/NE555
Timing from micro-seconds through hours
Operates in both astable and mono- stable modes
Adjustable duty cycle
Output can source or sink 200mA
Output and supply TTL compatible
Temperature stability better than 0.005% per C
Normally on and normally off output

In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS









LM555 LM555 TIMER

SMXLM555 TIMER - PRODUCT DESCRIPTION
The SMX LM555 is a highly stable device for generating accurate time delays or oscillation. Additional terminals are provided for triggering or resettin desired. In the time delay mode of operation, the time is precisely controlled by one external resistor and capacitor. For a stable operation as an oscillator, the free running frequency and duty cycle are accurately controlled with two external resistors and one capacitor.The circuit may retriggered and reset on falling waveforms, and the output circuit can source or sink up to 200mA or drive TTL circuits.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS
Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions.


SCHEMATIC DIAGRAM
LM555 National Semiconductor LM555 TIMER

LM555 MAXIMUM RATINGS
PARAMETERSYMBOLVALUEUNITS
Supply VoltagesVcc18V
Power Disipation(Note3) LM555CM, LM555CN LM555CMMPd1180 603mW
Operating Temperature Ranges LM555CTop0 to +70°C
Storage Temperature RangeTstg-65 to +150°C
ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

LM555 ELECTRICAL CHARACTERISTIC
(Note 1,2 TA=25°C,VCC=+5V to+15V unless otherwise specificed)
PARAMETERTEST CONDITIONSSYMBOLMINTYPMAXUNITS
Supply Voltage4.516V
Supply CurentVCC=5V R=¥ VCC=5V RL=¥ (Low State)Note43 106 15mA
Timing Error, Monostable Initial Accuracy Drift with Temperature Accuracy overTemperature Drift with SupplyRA=1k to 100kΩ C=0.1µF(Note 5)1 50 1.5 0.1% ppm/°C % %/V
Timing Error,Astable Initial Accuracy Drift with Temperature Accuracy overTemperature Drift with SupplyRA,RB=1k to 100kW C=0.1µF(Note 5)2.25 150 3.0 0.30% ppm/°C % %/V
Treshold Voltage0.667x VCC
Trigger VoltageVCC=15V VCC=5V5 1.67V
Trigger Current0.40.51µA
Reset Voltage0.40.51V
Reset Current0.10.4mA
Threshold CurrentNote60.10.25µA
Control Voltage LevelVCC=15V VCC=5V9 2.610 3.3311 4V
Pin Discharge Leakage Output High1100nA
Pin Discharge Sat Output Low Output LowVCC=15V,IZ=15mA VCC=4.5V,IZ=4.5mA180 80200mV
Output Voltage Drop (Low)VCC=15V ISINK=10mA ISINK=50mA ISINK=100mA ISINK=200mA VCC=5V ISINK=8mA ISINK=5mA0.1 0.4 2 2.5 0.250.25 0.75 2.5 0.35V
Output Voltage Drop (High)ISOURCE=200mA VCC=15V ISINK=100mA ,VCC=15V VCC=5V12.75 2.7512.5 13.3 3.3V
Rise Time of Output100ns
Fall Time of Output100ns
(NOTE 1)All voltages are measured with respect to the ground pin, unless otherwise specified.
(NOTE 2)Absolute Maximum Ratings indicate limits be yond which damage to the device may occur.Operating Ratings indicate conditions for which thedevice is functional,but do not guarantee specific performance limits.Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits.This assumes that the deviceis within the Operating Ratings.Specifications are not guaranteed for parameters where no limit is given,however,the typical value is a good indication of device performance.
(NOTE 3)For operating at elevated temperatures the device must be derated above 25°C based on a+150 °C maximum junction temperature and a thermal resistance of 106 °C/W (DIP),170 °C/W (S0-8),and 204 °C/W (MSOP) junction to ambient.
(NOTE 4)Supply current when output high typically 1mA less at Vcc=5V
(NOTE 5)Tested at Vcc=5V and Vcc=15V

SPICE MODEL
Spice model pending.
 
CROSS REFERENCE PARTS
Fairchild Semiconductor LM555, Harris Semiconductor LM555N, Intersil LM555C, National Semiconductor LM555

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Die size
mils [mm]
Bonding pads Backside metallization
Silicon 10 40.157 x 42.126 ±1
[1.02 x 1.07]
min 3.74 x3.74 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach.

LM555 DIE LAYOUT - MECHANICAL SPECIFICATIONSLM555 DIE LAYOUT - MECHANICAL SPECIFICATIONS
PAD #FUNCTIONX(mils)X(mm)Y(mils)
1GND3.740.09512.401
2Trigger4.5270.1154.921
3Out23.2280.594.921
4Reset31.8890.8117.716
5Control30.7080.7832.677
6Threshold31.8890.8125
7Discharge16.5350.4235.236
8Vcc4.9210.12519.291

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.

LM555 STANDARD PRODUCTS PRICE LIST
USM PART #MINIMUM ORDER QUANTITYWaffle PacksU/P($)
USMLM555100pc-WP$3.20
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting SEMICONIX SEMICONDUCTOR technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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