Varactor diode, tuning diode: SMSMV836 Single Varactor (Tuning) Diode 47pF same as kNOX MV836, Motorola MV836 kNOX MV836 manufactured by Semiconix Semiconductor - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Varactor diode, tuning diode: SMSMV836 Single Varactor (Tuning) Diode 47pF same as kNOX MV836, Motorola MV836 kNOX MV836 - Goldchip technology is trademark of Semiconix Corporation for known good Varactor diodes die, Varactor diodes flip chip, Varactor diodes bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Varactor diode, tuning diode: SMSMV836 Single Varactor (Tuning) Diode 47pF same as kNOX MV836, Motorola MV836 kNOX MV836 manufactured by Semiconix Semiconductor - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Varactor diode, tuning diode: SMSMV836 Single Varactor (Tuning) Diode 47pF same as kNOX MV836, Motorola MV836 kNOX MV836 - Goldchip technology is trademark of Semiconix Corporation for known good Varactor diodes die, Varactor diodes flip chip, Varactor diodes bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. /images/watermark.gif);background-position: center center;background-repeat: repeat-y;"> REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=SMSMV836">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMSMV836&c_item_1=Single%20Varactor%20(Tuning)%20Diode%2047pF"&g t;REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMSMV836 - BARE DIE GOLD CHIP TECHNOLOGY™ Single Varactor (Tuning) Diode 47pF FEATURES APPLICATIONS VARACTOR DIODE - BARE DIE High reliability bare die Gold metallization RoHS compliant, Lead Free Compatible with chip and wire assemblies Available with top cathode or top anode Chip on Board System in package SIP Hybrid Circuits Parametric amplifiers Parametric Oscillators Voltage-controlled oscillators PLL (phase-locked loops) Frequency synthesizers. SMSMV836 MV836 Single Varactor (Tuning) Diode 47pF VARACTOR DIODES - PRODUCT DESCRIPTION Varicap Diode, Varactor Diode, Variable Capacitance Diode or Tuning Diode is a type of diode which has a variable capacitance that is a function of the voltage impressed on its terminals. Varactors are operated reverse-biased so no current flows, but since the thickness of the depletion zone varies with the applied bias voltage, the capacitance of the diode can be made to vary. Generally, the depletion region thickness is proportional to the square root of the applied voltage; and capacitance is inversely proportional to the depletion region thickness. Thus, the capacitance is inversely proportional to the square root of applied voltage. All diodes exhibit this phenomenon to some degree, but specially made varactor diodes exploit the effect to boost the capacitance and variability range achieved - most diode fabrication attempts to achieve the opposite. Varactors are principally used as a voltage-controlled capacitor, rather than as rectifiers. They are commonly used in parametric amplifiers, parametric oscillators and voltage-controlled oscillators as part of phase-locked loops and frequency synthesizers. Single Varactor Diodes BD series are available in die form in two configurations, Top Cathode XXXX-BD or Top Anode XXXXA-BD. In die form, these products are ideal for high reliability hybrid circuits and multi chip module applications. Common Cathode or Common Anode Varactor Diodes BD series are available in die form in single configuration: Common Cathode in TOP ANODE configuration and Common Anode in TOP CATHODE configuration. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions. Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Forward current IF 150 mA Operating temperature range Top -65 to +150 °C Storage temperature Tstg -65 °C o t +200 °C °C Electrical Characteristics at TA= 25°C, unless otherwise specified Name Symbol Test Conditions Value Unit Min. Typ. Max Reverse Breakdown Voltage V(BR)R IR=10 µA 30 V Reverse current IR1 VR=25 V 200 nA Diode capacitance CT1 VR=4 V f=1MHz 42.3 47 51.7 pF Capacitance ratio CT1/CT10 Capacitance ratio CT2/CT20 Capacitance ratio CT4/CT25 VR=4 V, VR=25 V,f=1MHz 1.9 2.15 Figure of merit Q1 VR=4.0 Vdc ,f=50 MHz 15 20 SPICE MODEL CROSS REFERENCE PARTS: GENERAL DIE INFORMATION Substrate Thickness [mils] Die size [mils] Bonding pads Backside metallization Silicon 6±1 10x20±2 Pad metal is TiW/Au, 4µm±1 thick, 99.99% electroplated gold with TiW barrier. Custom metallization available upon request. P/N Metal Die attach process -BD0 Au/Si Au/Si eutectic -BD1 Ti/Pd/Au AuSn,AuGe -BD2 Ti/Pt/Au AuSn,AuGe -BD3 Ti/Ni/Au Soft Solder SAC -BD4 Ti/Pt/AuSn AuSn eutectic LAYOUT / DIMENSIONS / PAD LOCATIONS Click to select → TOP CATHODE TOP ANODE TOP CATHODE SMSMV836 kNOX MV836, Motorola MV836 kNOX MV836 Single Varactor (Tuning) Diode 47pFTOP ANODE SMSMV836 kNOX MV836, Motorola MV836 kNOX MV836 Single Varactor (Tuning) Diode 47pF cathode SMSMV836 kNOX MV836, Motorola MV836 kNOX MV836 Single Varactor (Tuning) Diode 47pFanode SMSMV836 kNOX MV836, Motorola MV836 kNOX MV836 Single Varactor (Tuning) Diode 47pF SMSMV836 kNOX MV836, Motorola MV836 kNOX MV836 Single Varactor (Tuning) Diode 47pF SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. STANDARD PRODUCTS ORDERING INFORMATION VERSION SMS P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($) Top cathode SMSMV836-BD -WP 10000 -FF 45000 Top cathode SMSMV836-BD -WP 50000 -FF 225000 Top anode SMSMV836A-BD -WP 10000 -FF 45000 Top anode SMSMV836A-BD -WP 50000 -FF 225000 PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice. LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times. CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met. CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMSMV836&idx=110">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission.

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semiconix semiconductor - where the future is today - gold chip technology SMSMV836 - BARE DIE
GOLD CHIP TECHNOLOGY™ Single Varactor (Tuning) Diode 47pF

FEATURES APPLICATIONS VARACTOR DIODE - BARE DIE
High reliability bare die
Gold metallization
RoHS compliant, Lead Free
Compatible with chip and wire assemblies
Available with top cathode or top anode
Chip on Board
System in package SIP
Hybrid Circuits
Parametric amplifiers
Parametric Oscillators
Voltage-controlled oscillators
PLL (phase-locked loops)
Frequency synthesizers.
SMSMV836 MV836 Single Varactor (Tuning) Diode 47pF

VARACTOR DIODES - PRODUCT DESCRIPTION
Varicap Diode, Varactor Diode, Variable Capacitance Diode or Tuning Diode is a type of diode which has a variable capacitance that is a function of the voltage impressed on its terminals. Varactors are operated reverse-biased so no current flows, but since the thickness of the depletion zone varies with the applied bias voltage, the capacitance of the diode can be made to vary. Generally, the depletion region thickness is proportional to the square root of the applied voltage; and capacitance is inversely proportional to the depletion region thickness. Thus, the capacitance is inversely proportional to the square root of applied voltage.
All diodes exhibit this phenomenon to some degree, but specially made varactor diodes exploit the effect to boost the capacitance and variability range achieved - most diode fabrication attempts to achieve the opposite. Varactors are principally used as a voltage-controlled capacitor, rather than as rectifiers. They are commonly used in parametric amplifiers, parametric oscillators and voltage-controlled oscillators as part of phase-locked loops and frequency synthesizers. Single Varactor Diodes BD series are available in die form in two configurations, Top Cathode XXXX-BD or Top Anode XXXXA-BD. In die form, these products are ideal for high reliability hybrid circuits and multi chip module applications.
Common Cathode or Common Anode Varactor Diodes BD series are available in die form in single configuration: Common Cathode in TOP ANODE configuration and Common Anode in TOP CATHODE configuration.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS
Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.

Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Forward current IF 150 mA
Operating temperature range Top -65 to +150 °C
Storage temperature Tstg -65 °C o t +200 °C °C

Electrical Characteristics at TA= 25°C, unless otherwise specified
Name Symbol Test Conditions Value Unit
Min. Typ. Max
Reverse Breakdown Voltage V(BR)R IR=10 µA 30 V
Reverse current IR1 VR=25 V 200 nA
Diode capacitance CT1 VR=4 V f=1MHz 42.3 47 51.7 pF
Capacitance ratio CT1/CT10
Capacitance ratio CT2/CT20
Capacitance ratio CT4/CT25 VR=4 V, VR=25 V,f=1MHz 1.9 2.15
Figure of merit Q1 VR=4.0 Vdc ,f=50 MHz 15 20
SPICE MODEL
Spice model pending.
CROSS REFERENCE PARTS: kNOX MV836, Motorola MV836

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Die size
[mils]
Bonding pads Backside metallization
Silicon 6±1 10x20±2 Pad metal is TiW/Au, 4µm±1 thick, 99.99% electroplated gold with TiW barrier. Custom metallization available upon request.
P/N MetalDie attach process
-BD0Au/SiAu/Si eutectic
-BD1Ti/Pd/AuAuSn,AuGe
-BD2Ti/Pt/AuAuSn,AuGe
-BD3Ti/Ni/AuSoft Solder SAC
-BD4Ti/Pt/AuSnAuSn eutectic

LAYOUT / DIMENSIONS / PAD LOCATIONS
Click to select → TOP CATHODE TOP ANODE
TOP CATHODE SMSMV836 kNOX MV836, Motorola MV836 kNOX MV836 Single Varactor (Tuning) Diode 47pF
cathode SMSMV836 kNOX MV836, Motorola MV836 kNOX MV836 Single Varactor (Tuning) Diode 47pF
SMSMV836 kNOX MV836, Motorola MV836 kNOX MV836 Single Varactor (Tuning) Diode 47pF

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.

STANDARD PRODUCTS ORDERING INFORMATION

VERSION SMS P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($)
Top cathode SMSMV836-BD -WP 10000 -FF 45000
Top cathode SMSMV836-BD -WP 50000 -FF 225000
Top anode SMSMV836A-BD -WP 10000 -FF 45000
Top anode SMSMV836A-BD -WP 50000 -FF 225000

PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.
LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times.
CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met.
CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page.
SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.
ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts.
SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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