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SMXDS35V8A Rectifier Diode, 35V, 8A (UPS835L) same as Microsemi UPS835L manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor
SMXDS35V8A Rectifier Diode, 35V, 8A (UPS835L) same as Microsemi UPS835L manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor /images/watermark.gif);background-position: center center;background-repeat: repeat-y;"> REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=SMXDS35V8A">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXDS35V8A&c_item_1=Rectifier%20Diode,%2035V,%208A%20(UPS835L)">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMXDS35V8A - BARE DIE GOLD CHIP TECHNOLOGY™ Rectifier Diode, 35V, 8A (UPS835L) FEATURES APPLICATIONS RECTIFIER DIODE - BARE DIE High reliability bare die Very small conduction losses and switching losses,Fast switching Low forward voltage drop for higher efficiency,Low thermal resistance Gold metallization RoHS compliant, Lead Free Compatible with chip and wire assemblies Available with top cathode or top anode Chip on Board System in package SIP Hybrid Circuits Automotive, Biotechnology, Computers, Military, Medical, MEMS, Optoelectronics, Space, Telecommunications Smart Cards, RFID, PDA, Laptops, Mobile phones SMXDS35V8A Rectifier Diode, 35V, 8A (UPS835L) RECTIFIER DIODE - PRODUCT DESCRIPTION Rectifier diodes are devices used to convert alternating current (AC) to direct current (DC). They are an integral part of telecom rectifiers for the telecommunications industry, and in battery chargers, DC power systems, and other power system devices. Rectifier diodes are made from silicon and therefore have a typical forward voltage drop of 0.7V or less. Rectifier Diodes BD series are available in die form in two configurations, Top Cathode XXXX-BD or Top Anode XXXXA-BD. In die form, these products are ideal for high reliability hybrid circuits and multi chip module applications. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions. ABSOLUTE MAXIMUM RATINGS @ unless otherwise specified VRRM Peak Repetitive Reverse Voltage 35 V VRMS RMS Peak Reverse Voltage 25 V VRWM Working Peak Reverse Voltage 35 V VBRR Repetitive Reverse Breakdown Voltage 35 V IF(AV) Average Rectified Forward Current 8 A IFSM Forward Surge Current 100 A TOP Junction Operating Temperature Range -55 +125 °C TSTG Storage Temperature Range -55 +125 °C ELECTRICAL CHARACTERISTICS @25°C unless otherwise specified Symbol Parameter Value Unit Min. Typ. Max VF Forward Voltage @IF=8A 1 V VBR Maximum DC Blocking Voltage 35 V IR Reverse Leakage Current @VR=35V 1400 µA SPICE MODEL CROSS REFERENCE PARTS: GENERAL DIE INFORMATION Substrate Thickness [mils] Die size [mils] Bonding pads Backside metallization Silicon 6±1 77x77±2 Pad metal is TiW/Au, 4µm±1 thick, 99.99% electroplated gold with TiW barrier. Custom metallization available upon request. P/N Metal Die attach process -BD0 Au/Si Au/Si eutectic -BD1 Ti/Pd/Au AuSn,AuGe -BD2 Ti/Pt/Au AuSn,AuGe -BD3 Ti/Ni/Au Soft Solder SAC -BD4 Ti/Pt/AuSn AuSn eutectic LAYOUT / DIMENSIONS / PAD LOCATIONS Click to select image: TOP CATHODE TOP ANODE top cathode SMXDS35V8A Microsemi UPS835L Rectifier Diode, 35V, 8A (UPS835L)top anode SMXDS35V8A Microsemi UPS835L Rectifier Diode, 35V, 8A (UPS835L) top cathode SMXDS35V8A Microsemi UPS835L Rectifier Diode, 35V, 8A (UPS835L)top anode SMXDS35V8A Microsemi UPS835L Rectifier Diode, 35V, 8A (UPS835L) SMXDS35V8A Microsemi UPS835L Rectifier Diode, 35V, 8A (UPS835L) SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. STANDARD PRODUCTS ORDERING INFORMATION VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($) Top cathode SMXDS35V8A-BD -WP 10000 - -FF - - Top cathode SMXDS35V8A-BD -WP 50000 - -FF - - Top anode SMXDS35V8AA-BD -WP 10000 - -FF - - Top anode SMXDS35V8AA-BD -WP 50000 - -FF - - PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice. LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times. CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met. CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMXDS35V8A&idx=1576">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission.
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