SMS1N4148 Switching Diode, 100V, 200mA (1N4148) same as NXP Semiconductor 1N4148 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor SMS1N4148 Switching Diode, 100V, 200mA (1N4148) same as NXP Semiconductor 1N4148 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor /images/watermark.gif);background-position: center center;background-repeat: repeat-y;"> REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=SMS1N4148">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMS1N4148&c_item_1=Schottky%20Diode,%20100V,%20200mA%20(1N4148)">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMS1N4148 - BARE DIE GOLD CHIP TECHNOLOGYâ„¢ Switching Diode, 100V, 200mA (1N4148) FEATURES APPLICATIONS Switching Diode - BARE DIE High reliability bare die Very small conduction losses and switching losses,Fast switching Low forward voltage drop for higher efficiency,Low thermal resistance Gold metallization RoHS compliant, Lead Free Compatible with chip and wire assemblies Available with top cathode or top anode Chip on Board System in package SIP Hybrid Circuits Automotive, Biotechnology, Computers, Military, Medical, MEMS, Optoelectronics, Space, Telecommunications Smart Cards, RFID, PDA, Laptops, Mobile phones SMS1N4148 Switching Diode, 100V, 200mA (1N4148) Switching DiodeS - PRODUCT DESCRIPTION Switching Diodes (also known as hot carrier diodes) are semiconductor diodes with a low forward voltage drop and a very fast switching action, the low forward voltage leading to increased efficiency. While standard silicon diodes have a forward voltage drop of about 0.6 volts, Switching Diodes voltage drop at forward biases of around 1 mA is in the range 0.15 V to 0.46 V, which makes them useful in voltage clamping applications and prevention of transistor saturation, due to the higher current density in the Switching Diode. Switching Diodes are suited for switch mode power supplies and high frequency DC to DC converters. This devices are intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the small size of the package this device fits many applications. Switching Diodes BD series are available in die form in two configurations, Top Cathode XXXX-BD or Top Anode XXXXA-BD. In die form, these products are ideal for high reliability hybrid circuits and multi chip module applications. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions. ABSOLUTE MAXIMUM RATINGS @ unless otherwise specified VRRM Peak Repetitive Reverse Voltage 100 V VRMS RMS Peak Reverse Voltage 70 V VRWM Working Peak Reverse Voltage 100 V VBRR Repetitive Reverse Breakdown Voltage 100 V IF(AV) Average Rectified Forward Current 200 mA IFSM Forward Surge Current 2 A PD Power Dissipation 400 mW TOP Junction Operating Temperature Range -55 +125 °C TSTG Storage Temperature Range -55 +125 °C ELECTRICAL CHARACTERISTICS @25°C unless otherwise specified Symbol Parameter Value Unit Min. Typ. Max VF Forward Voltage @IF=10mA 1 V VBR Maximum DC Blocking Voltage 30 V IR Reverse Leakage Current @VR=20V 25 nA IR Reverse Leakage Current @VR=75V 1 µA CJ Capacitance (@1.0MHz,) 4 pF tRR Reverse Recovery Time (IF=IR=10mA, IRR = 3mA, RL=100ohm) 50 ns SPICE MODEL CROSS REFERENCE PARTS: GENERAL DIE INFORMATION Substrate Thickness [mils] Die size [mils] Bonding pads Backside metallization Silicon 6±1 LLxWW±2 Pad metal is TiW/Au, 4µm±1 thick, 99.99% electroplated gold with TiW barrier. Custom metallization available upon request. P/N Metal Die attach process -BD0 Au/Si Au/Si eutectic -BD1 Ti/Pd/Au AuSn,AuGe -BD2 Ti/Pt/Au AuSn,AuGe -BD3 Ti/Ni/Au Soft Solder SAC -BD4 Ti/Pt/AuSn AuSn eutectic LAYOUT / DIMENSIONS / PAD LOCATIONS Click to select image: TOP CATHODE TOP ANODE top cathode SMS1N4148 NXP Semiconductor 1N4148 Switching Diode, 100V, 200mA (1N4148)top anode SMS1N4148 NXP Semiconductor 1N4148 Switching Diode, 100V, 200mA (1N4148) top cathode SMS1N4148 NXP Semiconductor 1N4148 Switching Diode, 100V, 200mA (1N4148)top anode SMS1N4148 NXP Semiconductor 1N4148 Schottky Diode, 100V, 200mA (1N4148) SMS1N4148 NXP Semiconductor 1N4148 Switching Diode, 100V, 200mA (1N4148) SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. STANDARD PRODUCTS ORDERING INFORMATION VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($) Top cathode SMS1N4148-BD -WP 10000 - -FF - - Top cathode SMS1N4148-BD -WP 50000 - -FF - - Top anode SMS1N4148A-BD -WP 10000 - -FF - - Top anode SMS1N4148A-BD -WP 50000 - -FF - - PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice. LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times. CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met. CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMS1N4148&idx=12">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission.

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semiconix semiconductor - where the future is today - gold chip technology SMS1N4148 - BARE DIE
GOLD CHIP TECHNOLOGY™ Switching Diode, 100V, 200mA (1N4148)

FEATURES APPLICATIONS Switching Diode - BARE DIE
High reliability bare die
Very small conduction losses and switching losses,Fast switching
Low forward voltage drop for higher efficiency,Low thermal resistance
Gold metallization
RoHS compliant, Lead Free
Compatible with chip and wire assemblies
Available with top cathode or top anode 		Chip on Board
System in package SIP
Hybrid Circuits
Automotive, Biotechnology, Computers, Military, Medical, MEMS, Optoelectronics, Space, Telecommunications
Smart Cards, RFID, PDA, Laptops, Mobile phones 		SMS1N4148 Switching Diode, 100V, 200mA (1N4148)

Switching DiodeS - PRODUCT DESCRIPTION
Switching diodes are are characterized by reverse voltages from 25 to 100 V and forward currents from 100 to 500 mA. They are used for all applications of signal processing. An important measure is the reverse recovery time. That is the time that the diode needs to switch from the conducting state to the inhibiting state. It lies typically between 1 and 20 ns. Switches are used both for digital purposes (e.g. for the logical link of signals) as well as for analog applications (e.g. as a demodulator, as sensors, in high-precision rectifier circuits, and so on.) Switching Diodes are suited for switch mode power supplies and high frequency DC to DC converters. This devices are intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the small size of the package this device fits many applications. Switching Diodes BD series are available in die form in two configurations, Top Cathode XXXX-BD or Top Anode XXXXA-BD. In die form, these products are ideal for high reliability hybrid circuits and multi chip module applications.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS
Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.

ABSOLUTE MAXIMUM RATINGS @ unless otherwise specified
VRRM Peak Repetitive Reverse Voltage 100 V
VR Continous Reverse Voltage 100 V
IF Continuous Forward Current 200 mA
IFRM Repetitive Peak Forward Current 450 mA
IFSM Non-Repetitive Peak Forward Current (square wave, T=25°C, t=1µs) 4 A
IFSM Non-Repetitive Peak Forward Current (square wave, T=25°C, t=1ms) 1 A
IFSM Non-Repetitive Peak Forward Current (square wave, T=25°C, t=1s) 0.5 A
PD Power Dissipation 500 mW
TOP Junction Operating Temperature Range -65 +200 °C
TSTG Storage Temperature Range -65 +200 °C

ELECTRICAL CHARACTERISTICS @25°C unless otherwise specified
Symbol Parameter Value Unit
Min. Typ. Max
VF Forward Voltage @IF=10mA 1 V
VF Forward Voltage @IF=100mA 1 V
IR Reverse Leakage Current @VR=20V 25 nA
IR Reverse Leakage Current @VR=20V, TJ=150°C 50 µA
CJ Capacitance (@1.0MHz,VR=0V)     4 pF
tRR Reverse Recovery Time (switched from IF=10mA to IR=60mA, @IR=1mA, RL=100ohm)     4 ns
VFR Forward Recovery Voltage (switched from IF=50mA, tr=20ns)     2.5 V
SPICE MODEL 
.model D1N4148  D(Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Xti=3 Eg
*1.11 Cjo=4p
+               M=.3333 Vj=.5 Fc=.5 Isr=1.565n Nr=2 Bv=100 Ibv=1
*0u Tt=11.54n)
CROSS REFERENCE PARTS: NXP Semiconductor 1N4148, Fairchild Semiconductor 1N4148

GENERAL DIE INFORMATION
Substrate Thickness
[mils]		 Die size
[mils] 		Bonding pads Backside metallization
Silicon 6±1 LLxWW±2 Pad metal is TiW/Au, 4µm±1 thick, 99.99% electroplated gold with TiW barrier. Custom metallization available upon request.
P/N MetalDie attach process
-BD0Au/SiAu/Si eutectic
-BD1Ti/Pd/AuAuSn,AuGe
-BD2Ti/Pt/AuAuSn,AuGe
-BD3Ti/Ni/AuSoft Solder SAC
-BD4Ti/Pt/AuSnAuSn eutectic

LAYOUT / DIMENSIONS / PAD LOCATIONS
Click to select image: TOP CATHODE TOP ANODE
top cathode SMS1N4148 NXP Semiconductor 1N4148 Switching Diode, 100V, 200mA (1N4148)
top cathode SMS1N4148 NXP Semiconductor 1N4148 Switching Diode, 100V, 200mA (1N4148)
SMS1N4148 NXP Semiconductor 1N4148 Switching Diode, 100V, 200mA (1N4148)

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.

STANDARD PRODUCTS ORDERING INFORMATION

VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($)
Top cathode SMS1N4148-BD -WP 10000 - -FF - -
Top cathode SMS1N4148-BD -WP 50000 - -FF - -
Top anode SMS1N4148A-BD -WP 10000 - -FF - -
Top anode SMS1N4148A-BD -WP 50000 - -FF - -

PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.
LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times.
CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met.
CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page.
SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.
ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts.
SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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