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SMX LM7808AA 8V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS same as National Semiconductor LM7808AA, manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire.
SMX LM7808AA 8V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS same as National Semiconductor LM7808AA, manufactured by
Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors,
integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix
Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive
components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high
reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled
via flip chip or chip and wire. REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=LM7808AA">INVENTORY
/cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXLM7808AA&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE
SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX LM7808AA - BARE DIE GOLD CHIP TECHNOLOGY™ 8V
POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS FEATURES APPLICATIONS VOLTAGE REGULATOR Output Current in Excess of 1A Output Voltages
of +8V Internal Thermal Overload Protection Short Circuit Protection Output Transistor Safe Operating area Compensation In DIE form, this
device is an excellent selection for many chip and wire HYBRID CIRCUITS LM7808AA LM7808AA 8V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID
CIRCUITS SMXLM7808AA 8V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS - PRODUCT DESCRIPTION SMX LM7808A is a 3-terminal positive
voltage regulator designed with built in internal current limiting, thermal shutdown and safe-area compensation for maximum flexibility and
safety . With adequate heat sinking provided, SMX LM7808A can deliver up to 1.5A output current. SMX LM7808A can be used as fixed voltage
regulator in a wide range of applications where local voltage regulation is preferred for elimination of noise and distribution problems
associated with single-point regulation. SMX LM7808A can also be used (by adding external components) to obtain adjustable output voltages
and currents. It is not necessary to bypass the output, although this does improve transient response. Input bypassing is needed only if
the regulator is located far from the filter capacitor of the power supply. SMX LM7808A is available in die form only. The die size is
66.93x72.83mils. The die thickness is 16.5±1 mils. The bond pad metallization is standard 1µm Aluminum. The backside of the die is coated
with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT
APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies
i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have
small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly
process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package.
KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard
semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to
moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die
for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also
offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical,
military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS Semiconductor Integrated Circuits
are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ
precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect
metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily
integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions. SCHEMATIC DIAGRAM LM7808AA
National Semiconductor LM7808AA 8V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS LM7808AA MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS
Internal Power Dissipation (Note1) Pd internally limited W Maximum Junction Temperature Tj 150 °C Operating Junction Temperature Range Tj 0
to 150 °C Storage Temperature Range Tstg -65 to +150 °C ESD Susceptibility 2 KV ONLY Proper die handling equipment and procedures should be
employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. LM7808AA ELECTRICAL CHARACTERISTIC
55°C<Tj<+150°C, Vi = 14V, Io = 550mA, Ci = 0.33µF, Co= 0.1µF, unless otherwise specified PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX
UNITS Output Voltage Tj=25 ° C VO 7.7 8 8.3 V Line Regulation Tj = 25 °C 8.0V<Vi<25V 9.0V<Vi<13V ΔVO 6.0 2.0 8.0 40 mV Load Regulation Tj =
25 °C 5.0mA<IO<1.5A 250mA<IO< 750mA ΔVO 12 4.0 100 40 mV Output Voltage 11V<Vi<23V, 5.0mA <Io<1.0A, P<15W Vo 7.6 8.4 mV Quiescent Current
Tj = 25 °C Iq 4.3 6 mA Quiescent Current With Line With Load 8V<Vi<25V 5.0mA<Io<1.0A DIq 0.8 0.5 mA Noise Ta=25°C, 10Hz<f<100kHz Vn 64 320
µV Ripple Rejection f=120Hz, Io=350mA, Tj=25°C ΔV1/ΔVo 62 72 dB Dropout Voltage Io=1.0A, Tj=25°C Vdo 2 2.5 V Output Resistance f=1.0kHz Ro
16 mW Output Short Circuit Current Tj = 25°C, Vj = 35V Ios 0.75 1.2 A Peak Output Current Tj=25°C Ipk 1.3 2.2 3.3 A Average Temperature
Coefficient of Output Voltage 55°C<Ta<+250°C, Io<5mA ΔVo/ΔT -0.3 -0.4 mV/°C (NOTE 1)Load and line regulation are specified at constant
junction temperature. Changes in Vo due to heating effects have to be added to those due to the Io. The device should be subject to low
duty cycle pulses ONLY. (NOTE 2)All characteristics are measured with a 0.22µF capacitor from input to ground and a 0.1µF capacitor from
output to ground. All characteristics except noise voltage and ripple rejection ratio are measured using pulse techniques (tw<10ms, duty
cycle<5%). Output voltage changes due to changes in internal temperature must be taken into account separately. SPICE MODEL CROSS REFERENCE
PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization Silicon 16.5 66.93 x 72.83
±1 [1.7 x 1.85] min 9.5x9.5 mils Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach.
LM7808AA DIE LAYOUT - MECHANICAL SPECIFICATIONS LM7808AA DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(µm) Y(µm) 1 Input 710 775
2 GND -750 -825 3 Output -750 825 Note: Origin is the center of the die. SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix
standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach
process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of
Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In
general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum
wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding
pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow
temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum
intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note
AN-SMX-000. LM7808AA STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USM7808A $320/100pc. -WP $3.20
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum
order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different
packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N
Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility
is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX
reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and
should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft,
space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES
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