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SMX LP2951-5.0 100mA Low Dropout Voltage Regulators same as National Semiconductor LP2951-5.0, manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire.
SMX LP2951-5.0 100mA Low Dropout Voltage Regulators same as National Semiconductor LP2951-5.0, manufactured by Semiconix
Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated
circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for
known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components
manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability
devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip
chip or chip and wire. REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=LP2951-5.0">INVENTORY
/cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXLP2951-5.0&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE
SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX LP2951-5.0 - BARE DIE GOLD CHIP TECHNOLOGY™ 100mA
Low Dropout Voltage Regulators FEATURES APPLICATIONS LDO VOLTAGE REGULATOR High accuracy output voltage Guaranted 100mA output Very low
quiescent current Low dropout voltage Extremely tight load and line regulation Very low temperature coefficient Needs only 1µF for
stability; Error Flag warms of output dropout Logic-Controlled electronic shutdown Output programmable from 1.24 to 29V. In DIE form, this
device is an excellent selection for many chip and wire HYBRID CIRCUITS LP2951-5.0 LP2951-5.0 100mA Low Dropout Voltage Regulators
SMXLP2951-5.0 100mA Low Dropout Voltage Regulators - PRODUCT DESCRIPTION The SMX LP2951-5.0 series are micropower voltage regulators with
very low quiescent current (75µA typ.) and very low drop out voltage (typ.40 mV at light loads and 380 mV at 100mA). They are ideally
suited for use in battery-powered systems. Furthermore, the quiescent current of the LP2951 increases only slightly in drop out, prolonging
battery life. The 8-lead LP2951 is available in die form. One such feature is an error flag output which warns of a low output voltage,
often due to falling batteries on the input. It may be used for a power-on reset. A second feature is the logic-compatible shut down in put
which enables the regulator to be switched on and off. Also, the part may be pin-strapped for a 5V,3V,or 3.3V output (depending on the
version), or programmed from 1.24V to 29V with an external pair of resistors. Careful design of the LP2951 has minimized all contributions
to the error budget. This includes a tight initial tolerance (0.5% typ.), extremely good load and line regulation (0.05% typ.)and a very
low output voltage temperature coefficient, making the part useful as a low-power voltage reference. HIGH RELIABILITY BARE DIE AND SYSTEM
IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of
mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology.
COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less
expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the
protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions
and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are
extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now
offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die
reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high
reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING
PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes.
All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts
and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film
resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions.
SCHEMATIC DIAGRAM LP2951-5.0 National Semiconductor LP2951-5.0 100mA Low Dropout Voltage Regulators LP2951-5.0 MAXIMUM RATINGS PARAMETER
SYMBOL VALUE UNITS Power disipation Internal limited Storage Temperature Range Tstg -65 to +150 °C Operating Junction Temperature Range Tj
-55 to +150 °C Output Voltage Vout 5 V Input Supply Voltage Iin -0.3 to +30 V Feedback Input Voltage If -1.5 to +30 V Shutdown Input
Voltage Isd -0.3 to +30 V Error Comparator Output Verr -0.3 to +30 V ONLY Proper die handling equipment and procedures should be employed.
Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. LP2951-5.0 ELECTRICAL CHARACTERISTIC (Ta=25°C,
VIN=15V, unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Output Voltage 25°C<Tj<85°C Full Operating
Temperature 0.985 |Vo| 0.98 |Vo| Vo 1.015 |Vo| 1.02 |Vo| V Output Voltage 100µA<IL<100mA, TJ<TJMAX 0.976 |Vo Vo 1.024 |Vo| V Output Voltage
Note1 50 150 ppm/°C Line Regulation(Note3) VO+1V<Vm<30V(Note4) 0.04 5.075 % Load Regulation (Note3) 100µA<IL<100mA 0.1 0.3 % Dropout
Voltage (Note 3) IL=100µA IL=100mA 50 380 80 450 mV Ground Current IL=100µA IL=100mA 75 8 120 12 µA mA Dropout Ground Current Vin=V0-0.5V
IL=100µA 110 170 µA Current Limit Vout=0 160 200 mA Thermal Regulation 0.05 0.2 %/W Output Noise, 10Hz to 100 kHz CL=1µF CL=200µF CL=3.3µF
(Bypass=0.01µF pins 7 to 1) 430 160 100 µVrms Reference Voltage 1.21 1.235 1.26 V Reference Voltage Over Temperature (Note6) 1.185 1.285 V
Feedback pin Bias Current 20 40 µA Reference Voltage Temperature Coefficient 5 ppm/°C Feedback Pin Bias Current Temperature Coefficient 0.1
µA/°C ERROR COMPARATOR Output Leakage Current VV 0.01 1 µA Output Low Voltage Vin=4.5V,IOL=400µA 150 250 mV Upper Threshold Voltage (Note
8) 40 60 mV Lower Threshold Voltage (Note 8) 75 95 mV Hysteresis (Note 8) 15 mV SHUTDOWN INPUT Input logic Voltage Low (Regulator ON) High
(Regulator OFF) 2 1.3 0.7 V Shut down Pin Input Current VS=2.4V VS=30V 30 450 50 600 µA Regulator Output Current in Shutdown (Note9)
Vout=5.0V 3 10 µA (NOTE 1) Output or reference voltage temperature coefficients defined as the worst case voltage change divided by the
total temperature range. (NOTE 2) Unless otherwise specified all limits guaranteed for TJ=25°C, Vin=V0+1V, IL=100µA and CL=1µF. Additional
conditions for the 8-pin versions are feedback tied to - XX V tap and output tied to output Sense (Vout=XX V) and Vshutdown<0.8V (NOTE 3)
Regulations is measured at constant junction temperature,using pulse testing with a low duty cycle. Changes in output voltage due to
heating effects are covered under the specification for thermal regulation. (NOTE 4) Line regulation for LP2951 -XX is tested at 150°C for
IL=1mA. For IL=100µA and TJ=125°C, line regulation is guranteed by design 0.2%. See typical performance characteristics for temperature and
load current. (NOTE 5) Dropout voltage is defined as the input to differential at which the output voltage drops 100mV below its nominal
value measured at 1V differential. At very low values of programmed output voltage, the minimum input supply voltage off 2V (2.3V over
temperature )must be taken into account. (NOTE 6) Vref<Vout<Vin-1V, 2.3V<Vin<30V, 100µA<IL<100mA,TJ<TJMAX (NOTE 7) Output or reference
voltage temperature coeffecient is defined as the worst case voltage change divided by the total temperature range (NOTE 8) Comparator
thresholds are expressed in terms of voltage differential at the feedback terminal below the nominal reference voltage measured at V0+1V
input. To express these thresholds in therms of output voltage change, multiply by the error amplifier gain = Vout/Vref=(R1 +R2)/R2. For
example at a programmed output is guaranteed to go low when the output drops by 95mVx5V/1.235V = 384mV. Thresholds remain constant as a
percent of Vout as Vout is varied, with the dropout warning occuring at typically 5% below nominal, 7,5% guaranteed. (NOTE 9) Vshutdown>2V,
Vin<30V, Vout=0, Feedback pin tied to - XX V Tap SPICE MODEL CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die
size mils [mm] Bonding pads Backside metallization Silicon 10 80.7 x 45.276 ±1 [2.05 x 1.15] min 4x4 mils, 1µm thick, aluminium Backside of
the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. LP2951-5.0 DIE LAYOUT - MECHANICAL
SPECIFICATIONS LP2951-5.0 DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mils) X(mm) Y(mils) 1 OUTPUT 17.323 0.44 4.331 2 SENSE
31.89 0.81 4.331 3 SHUTDOWN 49.213 1.25 4.331 4 GROUND 73.425 1.865 4.331 5 ERROR 73.425 1.865 37.402 6 XX V TAP 36.811 0.935 37.402 7
FEEDBACK 28.937 0.735 37.402 8 INPUT 17.323 0.44 37.402 SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die
components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or
Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au,
Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die
attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be
used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire!
In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in
some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are
brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. LP2951-5.0 STANDARD
PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USM LP2951-5.0 100pc -WP $3.20 Products sold for space, military
or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a
case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations,
contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX
has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor
for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or
modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems,
which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear
facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMXLP2951-5.0&idx=13">PDF
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