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SMX CS5201 1A Low Dropout Positive Voltage Regulator same as ON Semiconductor CS5201, Cherry Semiconductor CS5201-1, Cherry Semiconductor CS5201-3GDP3, Cherry Semiconductor CS52015-3GDP3, Cherry Semiconductor CS5201-3GDPR3, Cherry Semiconductor CS5201-3GST3, Cherry Semiconductor CS5201-3GSTR3, Cherry Semiconductor CS52015-3, Cherry Semiconductor CS5201-3GT3, Cherry Semiconductor CS52015-1, Cherry Semiconductor CS52015-1GT3, Cherry Semiconductor CS52015-1GSTR3, Cherry Semiconductor CS52015-1GDPR3, Cherry Semiconductor CS52015-3GDPR3, Cherry Semiconductor CS5201-3, Cherry Semiconductor CS5201-1GST3, Cherry Semiconductor CS5201-1GDP3, Cherry Semiconductor CS52015-3GSTR3, Cherry Semiconductor CS5201-1GDPR3, Cherry Semiconductor CS5201-1GSTR3, Cherry Semiconductor CS52015-3GT3, Cherry Semiconductor CS52015-3GST3, ON Semiconductor CS52015-3GT3, ON Semiconductor CS52015-3GSTR3, ON Semiconductor CS52015-1GSTR3, ON Semiconductor CS52015-1GT3, ON Semiconductor CS52015-3GDPR3, ON Semiconductor CS52015-3, ON Semiconductor CS52015-3-D, ON Semiconductor CS52015-3GST3, ON Semiconductor CS52015-3GDP3, ON Semiconductor CS52015-1GST3, ON Semiconductor CS52015-1GDPR3, ON Semiconductor CS5201-1-D, ON Semiconductor CS5201-1GDP3, ON Semiconductor CS5201-1GST3, ON Semiconductor CS5201-1GSTR3, ON Semiconductor CS5201-1GT3, ON Semiconductor CS5201-1GDPR3, ON Semiconductor CS5201-3, ON Semiconductor CS5201-3-D, ON Semiconductor CS5201-3GDP3, ON Semiconductor CS5201-3GDPR3, ON Semiconductor CS5201-3GST3, ON Semiconductor CS5201-3GSTR3, ON Semiconductor CS5201-3GT3, ON Semiconductor CS52015-1, ON Semiconductor CS52015-1-D, ON Semiconductor CS52015-1GDP3, ON Semiconductor CS5201-1 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire.
Cherry Semiconductor CS5201-1, ON Semiconductor CS5201-1
SMX CS5201 1A Low Dropout Positive Voltage Regulator same as ON Semiconductor CS5201, Cherry Semiconductor CS5201-1, Cherry
Semiconductor CS5201-3GDP3, Cherry Semiconductor CS52015-3GDP3, Cherry Semiconductor CS5201-3GDPR3, Cherry Semiconductor CS5201-3GST3,
Cherry Semiconductor CS5201-3GSTR3, Cherry Semiconductor CS52015-3, Cherry Semiconductor CS5201-3GT3, Cherry Semiconductor CS52015-1,
Cherry Semiconductor CS52015-1GT3, Cherry Semiconductor CS52015-1GSTR3, Cherry Semiconductor CS52015-1GDPR3, Cherry Semiconductor
CS52015-3GDPR3, Cherry Semiconductor CS5201-3, Cherry Semiconductor CS5201-1GST3, Cherry Semiconductor CS5201-1GDP3, Cherry Semiconductor
CS52015-3GSTR3, Cherry Semiconductor CS5201-1GDPR3, Cherry Semiconductor CS5201-1GSTR3, Cherry Semiconductor CS52015-3GT3, Cherry
Semiconductor CS52015-3GST3, ON Semiconductor CS52015-3GT3, ON Semiconductor CS52015-3GSTR3, ON Semiconductor CS52015-1GSTR3, ON
Semiconductor CS52015-1GT3, ON Semiconductor CS52015-3GDPR3, ON Semiconductor CS52015-3, ON Semiconductor CS52015-3-D, ON Semiconductor
CS52015-3GST3, ON Semiconductor CS52015-3GDP3, ON Semiconductor CS52015-1GST3, ON Semiconductor CS52015-1GDPR3, ON Semiconductor
CS5201-1-D, ON Semiconductor CS5201-1GDP3, ON Semiconductor CS5201-1GST3, ON Semiconductor CS5201-1GSTR3, ON Semiconductor CS5201-1GT3, ON
Semiconductor CS5201-1GDPR3, ON Semiconductor CS5201-3, ON Semiconductor CS5201-3-D, ON Semiconductor CS5201-3GDP3, ON Semiconductor
CS5201-3GDPR3, ON Semiconductor CS5201-3GST3, ON Semiconductor CS5201-3GSTR3, ON Semiconductor CS5201-3GT3, ON Semiconductor CS52015-1, ON
Semiconductor CS52015-1-D, ON Semiconductor CS52015-1GDP3, ON Semiconductor CS5201-1 manufactured by Semiconix Semiconductor - Gold chip
technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive
components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare
die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix
Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package
applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Cherry
Semiconductor CS5201-1, ON Semiconductor CS5201-1 REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=CS5201">INVENTORY
/cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXCS5201&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE
SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX CS5201 - BARE DIE GOLD CHIP TECHNOLOGY™ 1A Low
Dropout Positive Voltage Regulator FEATURES APPLICATIONS LDO VOLTAGE REGULATOR Ajustable or Fixed Output Output Current of 1A Low Dropout
700mV at 1A Output Current 0.04% Line Regulation 0.1% Load regulation 100% Trermal limit Burn-In Fast Transient Response Remote sense High
Eficiency Linear Regulators Post Regulators for Swiching Supplies CS5201 CS5201 1A Low Dropout Positive Voltage Regulator SMXCS5201 1A Low
Dropout Positive Voltage Regulator - PRODUCT DESCRIPTION The SMX CS5201 series of positive adjustable and fixed regulators are designed to
provide 1A with higher efficiency than currently available devices. All internal circuitry is designed to operate down to 700mV input to
output differential and the dropout voltage is fully specified as a function of load current. Dropout voltage of the device is 100mV at
light loads and rising to 700mV at maximum output current. A second low current input is required to achieve this dropout. The USM CS5201
can also be used as a single supply device (3 pin version). On-chip trimming adjusts the reference voltage to 1%. HIGH RELIABILITY BARE DIE
AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in
bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip)
technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and
less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the
protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions
and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are
extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now
offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die
reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high
reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING
PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes.
All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts
and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film
resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions.
SCHEMATIC DIAGRAM CS5201 ON Semiconductor CS5201 1A Low Dropout Positive Voltage Regulator CS5201 MAXIMUM RATINGS PARAMETER SYMBOL VALUE
UNITS Power Dissipation Pd Internally limited W Input Voltage Vpower Vcontrol Vin 7 13 V Operating Junction Temperature Range Control
Section Power Transistor Tj 0 to 125 0 to150 °C Storage Temperature Range Tstg -65 to +150 °C Lead Temperature (Soldering, 10 sec.) Tlead
300 °C ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause
permanent damage to the device. CS5201 ELECTRICAL CHARACTERISTIC (Note1) PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Reference
Voltage VCONTROL=2.75V; VPOWER=2V; ILOAD=10mA VCONTROL=2.7V to 12V; VPOWER=3.3V to 5.5V ILOAD=10mA to 1A 1.238 1.230 1.250 1.250 1.262
1.270 V Output Voltage USM CS5201-1.5 VCONTROL=4V; VPOWER=2V VCONTROL=3V; VPOWER=2.3V ILOAD=0mA to 1A 1.485 1.475 1.500 1.500 1.515 1.525 V
Output Voltage USM CS5201-2.5 VCONTROL=.5V; VPOWER=3.3V VCONTROL=4V; VPOWER=3.3V ILOAD=0mA to 1A 2.475 2.460 2.500 2.500 2.525 2.540 V
Output Voltage USM CS5201-2.85 VCONTROL=5.35V; VPOWER=3.35V VCONTROL=4.4V; VPOWER=3.7V ILOAD=0mA to 1A 2.821 2.805 2.850 2.850 2.879 2.895
V Output Voltage USM CS5201-3.0 VCONTROL=5.5V; VPOWER=3.5V VCONTROL=4.5V; VPOWER=3.8V ILOAD=0mA to 1A 2.970 2.950 3.000 3.000 3.030 3.050 V
Output Voltage USM CS5201-3.3 VCONTROL=5.8V; VPOWER=3.8V VCONTROL=4.8V; VPOWER=4.1V ILOAD=0mA to 1A 3.267 3.247 3.300 3.300 3.333 3.535 V
Output Voltage USM CS5201-3.5 VCONTROL=6V; VPOWER=4V VCONTROL=5V; VPOWER=4.3V ILOAD=0mA to 1A 3.465 3.445 3.500 3.500 3.535 3.555 V Output
Voltage USM CS5201-5.0 VCONTROL=7.5V; VPOWER=5.5V VCONTROL=6.5V; VPOWER=5.8V ILOAD=0mA to 1A 4.950 4.920 5.000 5.000 5.050 5.080 V Line
Regulation ILOAD=10mA; (1.5V+VOUT)≤VCONTROL≤12V 0.8≤(VPOWER-VOUT)≤5.5V 0.04 0.2 % Line Regulation VCONTROL=VOUT+2.5V; VPOWER=VOUT+0.8V
ILOAD=10mA to 1A 0.08 0.4 % Minimum Load Current (Note2) VCONTROL=5V; VPOWER=3.3V; VADJ=0V 1.7 5 mA Control Pin Current (Note3)
VCONTROL=VOUT+1.5V; VPOWER=VOUT+0.8V ILOAD=10mA to 1A 20 mA Ground Pin Current VCONTROL=VOUT+2.5V; VPOWER=VOUT+0.8V ILOAD=0mA to 1A 5 10 mA
Adjust Pin Current VCONTROL=2.75V; VPOWER=2.05V; ILOAD=10mA 50 120 µA Current Limit VIN-VOUT=3V 1000 1500 A Ripple Rejection
VCONTROL=VPOWER=VOUT+2.5V; VRIPPLE=1V ILOAD=500mA 60 75 dB Thermal Regulation TA=25°C, 30 ms pulse 0.003 %/W Dropout Voltage (Note 4)
Control Input (VCONTROL-VOUT) VPOWER=VOUT+0.8V; ILOAD=10mA ILOAD=1A 1.00 1.15 1.15 1.30 V Power Input VPOWER-VOUT VCONTROL=VOUT+2.5V;
ILOAD=1A 0.55 0.70 V (NOTE 1) VOUT=VSENSE; VADJ=0 unless otherwise specified (NOTE 2) For the adjustable device the minimum load current is
the minimum current required to mantain regulation. Normally the current in the resistor devider used to set the output voltage is selected
to meet the minimum load current requirement. (NOTE 3) The control pin current is the driver current required for the output transistor.
This current will track output current whit a ratio of about 1:100 (NOTE 4) The dropout voltage for the CS5201 is caused by either minimum
control voltage or minimum power voltage. The specification represent the minimum input/output voltage required to mantain 1% regulation.
SPICE MODEL CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization
Silicon 10 79 x 76 ±1 [2.01 x 1.93] min 4x4 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it
compatible with AuSi or AuGe die attach. CS5201 DIE LAYOUT - MECHANICAL SPECIFICATIONS CS5201 DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD #
FUNCTION X(mm) 1 OUT 0.17 2 OUT 1.83 3 VPower 1 4 VControl 0.816 5 Sense 0.17 6 Adjust (adjustable output) GND (fixed output) 0.17
SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire
bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For
soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach,
AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma
clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known
as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS
compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an
increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact
resistance and or bond failure. See Application note AN-SMX-000. CS5201 STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY
Waffle Packs U/P($) USM CS5201 100pc -WP $3.20 Products sold for space, military or medical applications, element evaluation and/or level K
or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level
KGD qualification requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post"
target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate
as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which
may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX
products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to
support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.
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