SMX CS52015 AJUSTABLE LINEAR REGULATOR same as ON Semiconductor CS52015, Cherry Semiconductor CS52015-1, Cherry Semiconductor CS52015-3, Cherry Semiconductor CS52015-3GDPR3, Cherry Semiconductor CS52015-1GT3, Cherry Semiconductor CS52015-1GSTR3, Cherry Semiconductor CS52015-3GST3, Cherry Semiconductor CS52015-1GDPR3, Cherry Semiconductor CS52015-3GSTR3, Cherry Semiconductor CS52015-3GT3, Cherry Semiconductor CS52015-3GDP3, ON Semiconductor CS52015-3GST3, ON Semiconductor CS52015-3GDPR3, ON Semiconductor CS52015-3GSTR3, ON Semiconductor CS52015-3GDP3, ON Semiconductor CS52015-3-D, ON Semiconductor CS52015-1, ON Semiconductor CS52015-1-D, ON Semiconductor CS52015-1GDP3, ON Semiconductor CS52015-1GDPR3, ON Semiconductor CS52015-1GST3, ON Semiconductor CS52015-1GSTR3, ON Semiconductor CS52015-1GT3, ON Semiconductor CS52015-3, ON Semiconductor CS52015-3GT3 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Cherry Semiconductor CS52015-1, ON Semiconductor CS52015-1 SMX CS52015 AJUSTABLE LINEAR REGULATOR same as ON Semiconductor CS52015, Cherry Semiconductor CS52015-1, Cherry Semiconductor CS52015-3, Cherry Semiconductor CS52015-3GDPR3, Cherry Semiconductor CS52015-1GT3, Cherry Semiconductor CS52015-1GSTR3, Cherry Semiconductor CS52015-3GST3, Cherry Semiconductor CS52015-1GDPR3, Cherry Semiconductor CS52015-3GSTR3, Cherry Semiconductor CS52015-3GT3, Cherry Semiconductor CS52015-3GDP3, ON Semiconductor CS52015-3GST3, ON Semiconductor CS52015-3GDPR3, ON Semiconductor CS52015-3GSTR3, ON Semiconductor CS52015-3GDP3, ON Semiconductor CS52015-3-D, ON Semiconductor CS52015-1, ON Semiconductor CS52015-1-D, ON Semiconductor CS52015-1GDP3, ON Semiconductor CS52015-1GDPR3, ON Semiconductor CS52015-1GST3, ON Semiconductor CS52015-1GSTR3, ON Semiconductor CS52015-1GT3, ON Semiconductor CS52015-3, ON Semiconductor CS52015-3GT3 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Cherry Semiconductor CS52015-1, ON Semiconductor CS52015-1 REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=CS52015">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXCS52015&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX CS52015 - BARE DIE GOLD CHIP TECHNOLOGY™ AJUSTABLE LINEAR REGULATOR FEATURES APPLICATIONS LDO VOLTAGE REGULATOR Output Current to 1.5 A Output Accuracy to ±1.0% Over Temperature Dropout Voltage (typical) 1.05 V @ 1.5 A Fast Transient Response Fault Protection:–Current Limit Thermal Shutdown In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS. CS52015 CS52015 AJUSTABLE LINEAR REGULATOR SMXCS52015 AJUSTABLE LINEAR REGULATOR - PRODUCT DESCRIPTION The SMX CS52015 linear regulator provides 1.5 A with an accuracy of ±1.0 %. The device uses two external resistors to set the output voltage within a 1.25 V to 5.5 V range. The regulator is intended for use as a post regulator and microprocessor supply. The fast loop response and low dropoutvoltage make this regulator ideal for applications where low voltage operation and good transient response are important. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions. SCHEMATIC DIAGRAM CS52015 ON Semiconductor CS52015 AJUSTABLE LINEAR REGULATOR CS52015 MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Supply Voltage VCC 7 V Operating Temperature Range Top -40 to +70 °C Junction Temperature Tj 150 °C Storage Temperature Range Tstg -60 to +150 °C Lead Temperature Soldering: Wave Solder (through hole styles only) Note 1. Reflow (SMD styles only) Note 2. 260 Peak 230 Peak °C ESD Damage Threshold 2 kV ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. (NOTE 1) 10 second maximum. (NOTE 2) 60 second maximum above 183°C CS52015 ELECTRICAL CHARACTERISTIC (CIN = 10 F, COUT = 22 F Tantalum, VOUT + VDROPOUT<VIN<7.0 V, 0°C≤TA ≤70°C, J≤+150°C, unless otherwise specified, Ifull load = 1.5 A) PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Reference Voltage (Notes 3. and 4.) VIN-VOUT=1.5V; VAdj=0V 10mA≤IOUT≤1.5A Vref 1.241 (-1.0%) 1.254 1.266 (+1.0%) V Line Regulation 1.5V≤VIN-VOUT≤5.75V, IOUT=10mA ΔVO/VO 0.02 0.2 % Load Regulation (Notes 3. and 4.) VIN-VOUT=1.5V; 10mA≤IOUT≤1.5A ΔVO/VO 0.04 0.4 % Dropout Voltage (Note 5.) VOUT=1.5A VI-VO 1.05 1.4 V Current Limit VIN-VOUT=3.0V; TJ≥25°C Imax 1.6 3.1 A Minimum Load Current (Note 6.) VIN=7.0V, VAdj=0V Iload 0.6 2 mA Adjust Pin Current VIN-VOUT=3.0V; IOUT=10mA Iadj 50 100 µA Thermal Regulation (Note 7.) 30ms Pulse, TA=25°C ΔVO/T 0.002 0.02 %/W Ripple Rejection (Note 7.) f=120Hz; IOUT=1.5A; VIN-VOUT=3.0V; VRIPPLE=1.0VPP dB Thermal Shutdown (Note 8.) 150 210 210 °C Thermal Shutdown Hysteresis (Note 8) °C (NOTE 3) Load regulation and output voltage are measured at a constant junction temperature by low duty cycle pulse testing. Changes in output voltage due to temperature changes must be taken into account seperately. (NOTE 4) Specifications apply for an external Kelvin sense connection at a point on the output pin 1/4” from the bottom of the package. (NOTE 5) Dropout voltage is a measurement of the minimum input/output differential at full load. (NOTE 6) The minimum load current is the minimum current required to maintain regulation. Normally the current in the resistor divider used to set the output voltage is selected to meet the minimum requirement. (NOTE 7) Guaranteed by design, not 100% tested in production. (NOTE 8) Thermal shutdown is 100% functionally tested in production. SPICE MODEL CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization Silicon 10 78.74 x 75.98 ±1 [2 x 1.93] min 5.512x5.512 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. CS52015 DIE LAYOUT - MECHANICAL SPECIFICATIONS CS52015 DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mm) X(mils) Y(mm) 1 Output 0.17 6.693 1.76 2 Output 1.83 72.047 1.76 3 Vpower 1 39.37 1.475 4 VControl 0.816 32.126 1.165 5 Sense 0.17 6.693 0.675 6 Adjust (adjustable output) GND (fixed output) 0.17 6.693 0.17 SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. CS52015 STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USM CS52015 100pc -WP $3.20 Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMXCS52015&idx=2">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission. Valid XHTML 1.0 Transitional by http://validator.w3.org

REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP

   
semiconix semiconductor - where the future is today - gold chip technology SMX CS52015 - BARE DIE
GOLD CHIP TECHNOLOGY™ AJUSTABLE LINEAR REGULATOR

FEATURES APPLICATIONS LDO VOLTAGE REGULATOR
Output Current to 1.5 A
Output Accuracy to ±1.0% Over Temperature
Dropout Voltage (typical) 1.05 V @ 1.5 A
Fast Transient Response
Fault Protection:–Current Limit Thermal Shutdown




In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS.









CS52015 CS52015 AJUSTABLE LINEAR REGULATOR

SMXCS52015 AJUSTABLE LINEAR REGULATOR - PRODUCT DESCRIPTION
The SMX CS52015 linear regulator provides 1.5 A with an accuracy of ±1.0 %. The device uses two external resistors to set the output voltage within a 1.25 V to 5.5 V range. The regulator is intended for use as a post regulator and microprocessor supply. The fast loop response and low dropoutvoltage make this regulator ideal for applications where low voltage operation and good transient response are important.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS
Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions.


SCHEMATIC DIAGRAM
CS52015 ON Semiconductor CS52015 AJUSTABLE LINEAR REGULATOR

CS52015 MAXIMUM RATINGS
PARAMETERSYMBOLVALUEUNITS
Supply VoltageVCC7V
Operating Temperature RangeTop-40 to +70°C
Junction TemperatureTj150°C
Storage Temperature RangeTstg-60 to +150°C
Lead Temperature Soldering: Wave Solder (through hole styles only) Note 1. Reflow (SMD styles only) Note 2. 260 Peak 230 Peak°C
ESD Damage Threshold 2kV
ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.
(NOTE 1) 10 second maximum.
(NOTE 2) 60 second maximum above 183°C

CS52015 ELECTRICAL CHARACTERISTIC
(CIN = 10 F, COUT = 22 F Tantalum, VOUT + VDROPOUT<VIN<7.0 V, 0°C≤TA ≤70°C, J≤+150°C, unless otherwise specified, Ifull load = 1.5 A)
PARAMETERTEST CONDITIONSSYMBOLMINTYPMAXUNITS
Reference Voltage (Notes 3. and 4.)VIN-VOUT=1.5V; VAdj=0V 10mA≤IOUT≤1.5AVref1.241 (-1.0%)1.2541.266 (+1.0%)V
Line Regulation1.5V≤VIN-VOUT≤5.75V, IOUT=10mAΔVO/VO0.020.2%
Load Regulation (Notes 3. and 4.)VIN-VOUT=1.5V; 10mA≤IOUT≤1.5AΔVO/VO0.040.4%
Dropout Voltage (Note 5.)VOUT=1.5AVI-VO1.051.4V
Current LimitVIN-VOUT=3.0V; TJ≥25°CImax1.63.1A
Minimum Load Current (Note 6.)VIN=7.0V, VAdj=0VIload0.62mA
Adjust Pin CurrentVIN-VOUT=3.0V; IOUT=10mAIadj50100µA
Thermal Regulation (Note 7.)30ms Pulse, TA=25°CΔVO/T0.0020.02%/W
Ripple Rejection (Note 7.)f=120Hz; IOUT=1.5A; VIN-VOUT=3.0V; VRIPPLE=1.0VPPdB
Thermal Shutdown (Note 8.)150210210°C
Thermal Shutdown Hysteresis (Note 8)°C
(NOTE 3) Load regulation and output voltage are measured at a constant junction temperature by low duty cycle pulse testing. Changes in output voltage due to temperature changes must be taken into account seperately.
(NOTE 4) Specifications apply for an external Kelvin sense connection at a point on the output pin 1/4” from the bottom of the package.
(NOTE 5) Dropout voltage is a measurement of the minimum input/output differential at full load.
(NOTE 6) The minimum load current is the minimum current required to maintain regulation. Normally the current in the resistor divider used to set the output voltage is selected to meet the minimum requirement.
(NOTE 7) Guaranteed by design, not 100% tested in production.
(NOTE 8) Thermal shutdown is 100% functionally tested in production.

SPICE MODEL
Spice model pending.
 
CROSS REFERENCE PARTS
Cherry Semiconductor CS52015-1, ON Semiconductor CS52015-1

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Die size
mils [mm]
Bonding pads Backside metallization
Silicon 10 78.74 x 75.98 ±1
[2 x 1.93]
min 5.512x5.512 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach.

CS52015 DIE LAYOUT - MECHANICAL SPECIFICATIONSCS52015 DIE LAYOUT - MECHANICAL SPECIFICATIONS
PAD #FUNCTIONX(mm)X(mils)Y(mm)
1Output0.176.6931.76
2Output1.8372.0471.76
3Vpower139.371.475
4VControl0.81632.1261.165
5Sense0.176.6930.675
6Adjust (adjustable output) GND (fixed output)0.176.6930.17

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.

CS52015 STANDARD PRODUCTS PRICE LIST
USM PART #MINIMUM ORDER QUANTITYWaffle PacksU/P($)
USM CS52015100pc-WP$3.20
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting SEMICONIX SEMICONDUCTOR technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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