SMX CS52015 AJUSTABLE LINEAR REGULATOR same as ON Semiconductor CS52015, Cherry Semiconductor CS52015-1, Cherry Semiconductor CS52015-3, Cherry Semiconductor CS52015-3GDPR3, Cherry Semiconductor CS52015-1GT3, Cherry Semiconductor CS52015-1GSTR3, Cherry Semiconductor CS52015-3GST3, Cherry Semiconductor CS52015-1GDPR3, Cherry Semiconductor CS52015-3GSTR3, Cherry Semiconductor CS52015-3GT3, Cherry Semiconductor CS52015-3GDP3, ON Semiconductor CS52015-3GST3, ON Semiconductor CS52015-3GDPR3, ON Semiconductor CS52015-3GSTR3, ON Semiconductor CS52015-3GDP3, ON Semiconductor CS52015-3-D, ON Semiconductor CS52015-1, ON Semiconductor CS52015-1-D, ON Semiconductor CS52015-1GDP3, ON Semiconductor CS52015-1GDPR3, ON Semiconductor CS52015-1GST3, ON Semiconductor CS52015-1GSTR3, ON Semiconductor CS52015-1GT3, ON Semiconductor CS52015-3, ON Semiconductor CS52015-3GT3 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Cherry Semiconductor CS52015-1, ON Semiconductor CS52015-1 SMX CS52015 AJUSTABLE LINEAR REGULATOR same as ON Semiconductor CS52015, Cherry Semiconductor CS52015-1, Cherry Semiconductor CS52015-3, Cherry Semiconductor CS52015-3GDPR3, Cherry Semiconductor CS52015-1GT3, Cherry Semiconductor CS52015-1GSTR3, Cherry Semiconductor CS52015-3GST3, Cherry Semiconductor CS52015-1GDPR3, Cherry Semiconductor CS52015-3GSTR3, Cherry Semiconductor CS52015-3GT3, Cherry Semiconductor CS52015-3GDP3, ON Semiconductor CS52015-3GST3, ON Semiconductor CS52015-3GDPR3, ON Semiconductor CS52015-3GSTR3, ON Semiconductor CS52015-3GDP3, ON Semiconductor CS52015-3-D, ON Semiconductor CS52015-1, ON Semiconductor CS52015-1-D, ON Semiconductor CS52015-1GDP3, ON Semiconductor CS52015-1GDPR3, ON Semiconductor CS52015-1GST3, ON Semiconductor CS52015-1GSTR3, ON Semiconductor CS52015-1GT3, ON Semiconductor CS52015-3, ON Semiconductor CS52015-3GT3 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Cherry Semiconductor CS52015-1, ON Semiconductor CS52015-1 REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=CS52015">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXCS52015&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX CS52015 - BARE DIE GOLD CHIP TECHNOLOGY™ AJUSTABLE LINEAR REGULATOR FEATURES APPLICATIONS LDO VOLTAGE REGULATOR Output Current to 1.5 A Output Accuracy to ±1.0% Over Temperature Dropout Voltage (typical) 1.05 V @ 1.5 A Fast Transient Response Fault Protection:Current Limit Thermal Shutdown In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS. CS52015 CS52015 AJUSTABLE LINEAR REGULATOR SMXCS52015 AJUSTABLE LINEAR REGULATOR - PRODUCT DESCRIPTION The SMX CS52015 linear regulator provides 1.5 A with an accuracy of ±1.0 %. The device uses two external resistors to set the output voltage within a 1.25 V to 5.5 V range. The regulator is intended for use as a post regulator and microprocessor supply. The fast loop response and low dropoutvoltage make this regulator ideal for applications where low voltage operation and good transient response are important. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions. SCHEMATIC DIAGRAM CS52015 ON Semiconductor CS52015 AJUSTABLE LINEAR REGULATOR CS52015 MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Supply Voltage VCC 7 V Operating Temperature Range Top -40 to +70 °C Junction Temperature Tj 150 °C Storage Temperature Range Tstg -60 to +150 °C Lead Temperature Soldering: Wave Solder (through hole styles only) Note 1. Reflow (SMD styles only) Note 2. 260 Peak 230 Peak °C ESD Damage Threshold 2 kV ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. (NOTE 1) 10 second maximum. (NOTE 2) 60 second maximum above 183°C CS52015 ELECTRICAL CHARACTERISTIC (CIN = 10 F, COUT = 22 F Tantalum, VOUT + VDROPOUT<VIN<7.0 V, 0°C≤TA ≤70°C, J≤+150°C, unless otherwise specified, Ifull load = 1.5 A) PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Reference Voltage (Notes 3. and 4.) VIN-VOUT=1.5V; VAdj=0V 10mA≤IOUT≤1.5A Vref 1.241 (-1.0%) 1.254 1.266 (+1.0%) V Line Regulation 1.5V≤VIN-VOUT≤5.75V, IOUT=10mA ΔVO/VO 0.02 0.2 % Load Regulation (Notes 3. and 4.) VIN-VOUT=1.5V; 10mA≤IOUT≤1.5A ΔVO/VO 0.04 0.4 % Dropout Voltage (Note 5.) VOUT=1.5A VI-VO 1.05 1.4 V Current Limit VIN-VOUT=3.0V; TJ≥25°C Imax 1.6 3.1 A Minimum Load Current (Note 6.) VIN=7.0V, VAdj=0V Iload 0.6 2 mA Adjust Pin Current VIN-VOUT=3.0V; IOUT=10mA Iadj 50 100 µA Thermal Regulation (Note 7.) 30ms Pulse, TA=25°C ΔVO/T 0.002 0.02 %/W Ripple Rejection (Note 7.) f=120Hz; IOUT=1.5A; VIN-VOUT=3.0V; VRIPPLE=1.0VPP dB Thermal Shutdown (Note 8.) 150 210 210 °C Thermal Shutdown Hysteresis (Note 8) °C (NOTE 3) Load regulation and output voltage are measured at a constant junction temperature by low duty cycle pulse testing. Changes in output voltage due to temperature changes must be taken into account seperately. (NOTE 4) Specifications apply for an external Kelvin sense connection at a point on the output pin 1/4 from the bottom of the package. (NOTE 5) Dropout voltage is a measurement of the minimum input/output differential at full load. (NOTE 6) The minimum load current is the minimum current required to maintain regulation. Normally the current in the resistor divider used to set the output voltage is selected to meet the minimum requirement. (NOTE 7) Guaranteed by design, not 100% tested in production. (NOTE 8) Thermal shutdown is 100% functionally tested in production. SPICE MODEL CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization Silicon 10 78.74 x 75.98 ±1 [2 x 1.93] min 5.512x5.512 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. CS52015 DIE LAYOUT - MECHANICAL SPECIFICATIONS CS52015 DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mm) X(mils) Y(mm) 1 Output 0.17 6.693 1.76 2 Output 1.83 72.047 1.76 3 Vpower 1 39.37 1.475 4 VControl 0.816 32.126 1.165 5 Sense 0.17 6.693 0.675 6 Adjust (adjustable output) GND (fixed output) 0.17 6.693 0.17 SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. CS52015 STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USM CS52015 100pc -WP $3.20 Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMXCS52015&idx=2">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission. Valid XHTML 1.0 Transitional by http://validator.w3.org |
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