Low Drop Voltage Regulators: SMS112 150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH same as AMS Advanced Monolithic Systems AMS112 SOT23-5L AMS Advanced Monolithic Systems AMS112 manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Low Drop Voltage Regulators: SMS112 150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH same as AMS Advanced Monolithic Systems AMS112 SOT23-5L AMS Advanced Monolithic Systems AMS112 manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. SOT23-5L AMS Advanced Monolithic Systems AMS112 AMS Advanced Monolithic Systems AMS112,SMS112,150mA Low Drop Voltage Regulators,,Low Drop Voltage Regulators, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire Low Drop Voltage Regulators: SMS112 150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH same as AMS Advanced Monolithic Systems AMS112 SOT23-5L AMS Advanced Monolithic Systems AMS112 manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Low Drop Voltage Regulators: SMS112 150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH same as AMS Advanced Monolithic Systems AMS112 SOT23-5L AMS Advanced Monolithic Systems AMS112 manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. SOT23-5L AMS Advanced Monolithic Systems AMS112 AMS Advanced Monolithic Systems AMS112,SMS112,150mA Low Drop Voltage Regulators,,Low Drop Voltage Regulators, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMS112 - BARE DIE GOLD CHIP TECHNOLOGY™ 150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS 150mA Low Drop Voltage Regulators - BARE DIE 3.3V and 5V Voltage Available Active High On/Off Control Output Current of 150mA Very Low Quiescent Current Low Dropout Voltage of 80mV at 30mA Very Low Noise Short Circuit Protection Internal Thermal Shutdown Space Saving 5 Lead SOT-23 Package High reliability bare die Gold metallization RoHS compliant, Lead Free Compatible with chip and wire assemblies Battery Powered Systems Portable Consumer Equipment Cordless Telephones Portable (Notebook) Computers Portable Instrumentation Radio Control Systems Personal Communication Equipment Toys Low Voltage Systems Chip on Board System in package SIP Hybrid Circuits SMS112 AMS112 150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH Actual die layout may vary 150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH - PRODUCT DESCRIPTION The AMS112 series consists of positive fixed voltage regulators featuring an internal electronic switch controlled by TTL or CMOS logic levels. When the Control pin is pulled to a logic high level, the device is in the ON state. If the control function is not used, the control terminal should be connected to a logic high level or VIN, therefore allowing the regulator to be ON. The regulator will be ON when the control terminal voltage is grater than 1.8V. To lower the output noise level to 30mVrms, an external capacitor can be connected to the noise bypass pin. These devices feature very low quiescent current of 1mA when supplying 30mA loads (180mA at no load). This unique characteristic and the low standby current (typ. 100nA) make the AMS112 ideal to use for standby power systems. Like other regulators the AMS112 series also includes internal current limiting and thermal shutdown. The AMS112 is offered in 3.3V and 5.0V output voltages, and is available in the 5-pin SOT-23 surface mount package. Low Drop Voltage Regulators Integrated Circuits BD series products available in die form are ideal for high reliability hybrid circuits and multi chip module applications. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions. ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Parameter Symbol Value Unit Power Dissipation 400 mW Input Voltage 16 V Storage Temperature -55 to +150 °C Operating Junction Temperature -30°C to +80 °C Electrical Characteristics* at IOUT=0 mA, TC=25°C unless otherwise noted Name Symbol Test Conditions Value Unit Min. Typ. Max Output Voltage (Note 2) VIN=VOUT+1V -3 3 % Standby Current VIN=8V, at output off 0.1 mA Line Regulation V IN=VOUT+1V to VOUT+6V 3 20 mV Load Regulation, (Notes 2, 3) 5mA≤IO≤60mA 10 50 mV Dropout Voltage (VIN - VOUT) IO=60 mA 160 260 mV Dropout Voltage (VIN - VOUT) IO=150 mA 290 400 mV Quiescent Current IO=0 mA, Except ICONT 170 350 mA Ripple Rejection 100mVrms, IO=10mA 55 dB Output Noise Voltage 10Hz < f < 80kHz, IO=30mA 30 mVrms Temperature Coefficient IO=10mA, -20°C≤TA≤+75°C 0.2 mV/°C Noise Bypass Terminal Voltage 1.25 V On/Off Current Output On 12 30 mA On/Off Voltage Output On 1.8 V On/Off Voltage Output Off 0.6 V Output Rise Time IO=30 mA, VCONT=0V to 1.8V 0.3 ms SPICE MODEL AMS112 spice model pending. CROSS REFERENCE PARTS: AMS Advanced Monolithic Systems AMS112 GENERAL DIE INFORMATION Substrate Thickness [mils] Die size [mils] Bonding pads Backside metallization Silicon Si 10 1 30x30±1 [0.76x0.76±0.025] Pads are minimum 4x4mils, 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion. P/N Metal Die attach process -BD0 Au/Si Au/Si eutectic -BD1 Ti/Pd/Au AuSn,AuGe -BD2 Ti/Pt/Au AuSn,AuGe -BD3 Ti/Ni/Au Soft Solder SAC -BD4 Ti/Pt/AuSn AuSn eutectic LAYOUT / DIMENSIONS / PAD LOCATIONS Actual die layout may vary SMS112 AMS Advanced Monolithic Systems AMS112 AMS Advanced Monolithic Systems AMS112 150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH SMS112 AMS112 150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH Pad locations Pin # Function X [µm] Y [µm] X [mils] Y [mils] 1 On/Off 100 100 3.94 3.94 2 GND 100 650 3.94 25.59 3 Bypass 375 375 14.76 14.76 4 Out 650 100 25.59 3.94 5 In 650 650 25.59 25.59 SMS112 AMS Advanced Monolithic Systems AMS112 AMS Advanced Monolithic Systems AMS112 150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH APPLICATION HINTS APPLICATION HINTS Package Power Dissipation The package power dissipation is the level at which the thermal sensor monitoring the junction temperature is activated. The SMS112 shuts down when the junction temperature exceeds the limit of 150°C. The junction temperature rises as the difference between the input power and output power increases. The mounting pad configuration on the PCB, the board material, as well as the ambient temperature affect the rate of temperature rise. The junction temperature will be low, even if the power dissipation is high, when the mounting of the device has good thermal conductivity. When mounted on the recommended mounting pad the power dissipation for the SOT-23 package is 400mW. For operation above 25°C derate the power dissipation at 3.2 mW/°C. To determine the power dissipation for shutdown when mounted, attach the device on the PCB and increase the input-to-output voltage until the thermal protection circuit is activated. Calculate the power dissipation of the device by subtracting the output voltage from the input voltage and multiply by the output current. The measurements should allow for the ambient temperature of the PCB. The value obtained from PD/(150°C - TA) is the derating factor. The PCB mounting pad should provide maximum thermal conductivity in order to maintain low device temperatures. As a general rule, the lower the temperature, the better the reliability of the device. The thermal resistance when the device is mounted is equal to: TJ = θJA x PD + TA The internal limit for junction temperature is 150°C. If the ambient temperature is 25°C, then: 150°C = θJA x PD + 25°C θJA = 125°C/ PD A simple way to determine PD is to calculate Vin x Iin when the output is shorted. As the temperature rises, the input gradually will decrease. The PD value obtained when the thermal equilibrium is reached, is the value that should be used. The maximum operating current is: Iout = ΔPD/(VIN(MAX) - VO) The range of usable currents can be found from the graph in figure 2. Procedure: 1. Find PD. 2. PD1 is calculated as PD x (0.8 - 0.9). 3. Plot PD1 against 25°C. 4. Connect PD1 to the point corresponding to the 150°C. External Capacitors The SMS112 series require input and output decoupling capacitors. The required value of these capacitors depends on the application circuit and other factors. Because high frequency characteristics of electrolytic capacitors depend greatly on the type and even the manufacturer, the value of capacitance that works well with SMS112 for one brand or type may not necessary be sufficient with an electrolytic of different origin. Sometimes actual bench testing will be the only means to determine the proper capacitor type and value. To obtain stability in all general applications a high quality 4.7mF aluminum electrolytic or a 2.2mF tantalum electrolytic can be used. A critical characteristic of the electrolytic capacitors is their performance over temperature. The SMS112 is designed to operate to -30°C, but some electrolytics will freeze around -30°C therefore becoming ineffective. In such case the result is oscillation at the regulator output. For all application circuits where cold operation is necessary, the output capacitor must be rated to operate at the minimum temperature. In order to determine the minimum value of the output capacitor, for an application circuit, the entire circuit including the capacitor should be bench tested at minimum operating temperatures and maximum operating currents. After the minimum capacitance value has been found, the value should be doubled for actual use to cover for production variations both in the regulator and the capacitor. The recommended minimum capacitance for SMS112 is 2.2mF. As a general rule, with higher output voltages the value of the output capacitance decreases, since the internal loop gain is reduced. Noise Bypass Capacitor The noise bypass capacitor should be connected as close as possible to pin 3 and ground. The recommended value for this capacitor is 0.01mF. The noise bypass terminal is susceptible to external noise, and oscillation can occur when the bypass capacitor is not used and the solder pad for this pin is too large. Because of the high impedance of the noise bypass terminal, care should be taken if the bypass capacitor is not used. Pinout Figure 1: Pinout Power Dissipation Figure 2: Power Dissipation SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. STANDARD PRODUCTS ORDERING INFORMATION SMS P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($) SMS112-BD -WP 1000 -FF 1000 SMS112-BD -WP 5000 -FF 5000 PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice. LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times. CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met. CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated:January 01, 1970 Display settings for best viewing: Current display settings: Page hits: 1 Screen resolution: 1124x864 Screen resolution: Total site visits: 1 Color quality: 16 bit Color quality: bit © 1990-2009 SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission.

REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP

   
semiconix semiconductor - where the future is today - gold chip technology SMS112 - BARE DIE
GOLD CHIP TECHNOLOGY™ 150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH

FEATURES APPLICATIONS 150mA Low Drop Voltage Regulators - BARE DIE
3.3V and 5V Voltage Available
Active High On/Off Control
Output Current of 150mA
Very Low Quiescent Current
Low Dropout Voltage of 80mV at 30mA
Very Low Noise
Short Circuit Protection
Internal Thermal Shutdown
Space Saving 5 Lead SOT-23 Package
High reliability bare die
Gold metallization
RoHS compliant, Lead Free
Compatible with chip and wire assemblies
Battery Powered Systems
Portable Consumer Equipment
Cordless Telephones
Portable (Notebook) Computers
Portable Instrumentation
Radio Control Systems
Personal Communication Equipment
Toys
Low Voltage Systems
Chip on Board
System in package SIP
Hybrid Circuits
SMS112 AMS112 150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH
Actual die layout may vary

150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH - PRODUCT DESCRIPTION
The AMS112 series consists of positive fixed voltage regulators featuring an internal electronic switch controlled by TTL or CMOS logic levels. When the Control pin is pulled to a logic high level, the device is in the ON state. If the control function is not used, the control terminal should be connected to a logic high level or VIN, therefore allowing the regulator to be ON. The regulator will be ON when the control terminal voltage is grater than 1.8V. To lower the output noise level to 30mVrms, an external capacitor can be connected to the noise bypass pin. These devices feature very low quiescent current of 1mA when supplying 30mA loads (180mA at no load). This unique characteristic and the low standby current (typ. 100nA) make the AMS112 ideal to use for standby power systems. Like other regulators the AMS112 series also includes internal current limiting and thermal shutdown. The AMS112 is offered in 3.3V and 5.0V output voltages, and is available in the 5-pin SOT-23 surface mount package.
Low Drop Voltage Regulators Integrated Circuits BD series products available in die form are ideal for high reliability hybrid circuits and multi chip module applications.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS
Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.

ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)
Parameter Symbol Value Unit
Power Dissipation 400 mW
Input Voltage 16 V
Storage Temperature -55 to +150 °C
Operating Junction Temperature -30°C to +80 °C

Electrical Characteristics* at IOUT=0 mA, TC=25°C unless otherwise noted
Name Symbol Test Conditions Value Unit
Min. Typ. Max
Output Voltage (Note 2) VIN=VOUT+1V -3 3 %
Standby Current VIN=8V, at output off 0.1 mA
Line Regulation V IN=VOUT+1V to VOUT+6V 3 20 mV
Load Regulation, (Notes 2, 3) 5mA≤IO≤60mA 10 50 mV
Dropout Voltage (VIN - VOUT) IO=60 mA 160 260 mV
Dropout Voltage (VIN - VOUT) IO=150 mA 290 400 mV
Quiescent Current IO=0 mA, Except ICONT 170 350 mA
Ripple Rejection 100mVrms, IO=10mA 55 dB
Output Noise Voltage 10Hz < f < 80kHz, IO=30mA 30 mVrms
Temperature Coefficient IO=10mA, -20°C≤TA≤+75°C 0.2 mV/°C
Noise Bypass Terminal Voltage 1.25 V
On/Off Current Output On 12 30 mA
On/Off Voltage Output On 1.8 V
On/Off Voltage Output Off 0.6 V
Output Rise Time IO=30 mA, VCONT=0V to 1.8V 0.3 ms
SPICE MODEL
Spice model pending.
CROSS REFERENCE PARTS: AMS Advanced Monolithic Systems AMS112

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Die size
[mils]
Bonding pads Backside metallization
Silicon
Si
10 1 30x30±1
[0.76x0.76±0.025]
Pads are minimum 4x4mils, 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion.
P/N MetalDie attach process
-BD0Au/SiAu/Si eutectic
-BD1Ti/Pd/AuAuSn,AuGe
-BD2Ti/Pt/AuAuSn,AuGe
-BD3Ti/Ni/AuSoft Solder SAC
-BD4Ti/Pt/AuSnAuSn eutectic

LAYOUT / DIMENSIONS / PAD LOCATIONS
Actual die layout may vary
SMS112 AMS Advanced Monolithic Systems AMS112 AMS Advanced Monolithic Systems AMS112 150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH SMS112 AMS112 150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH
Pad locations
Pin # Function X [µm] Y [µm] X [mils] Y [mils]
1 On/Off 100 100 3.94 3.94
2 GND 100 650 3.94 25.59
3 Bypass 375 375 14.76 14.76
4 Out 650 100 25.59 3.94
5 In 650 650 25.59 25.59
SMS112 AMS Advanced Monolithic Systems AMS112 AMS Advanced Monolithic Systems AMS112 150mA LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF SWITCH

APPLICATION HINTS

APPLICATION HINTS 


Package Power Dissipation
The package power dissipation is the level at which the thermal sensor monitoring the junction temperature is activated. The SMS112 shuts down when the junction temperature exceeds the limit of 150°C. The junction temperature rises as the difference between the input power and output power increases. The mounting pad configuration on the PCB, the board material, as well as the ambient temperature affect the rate of temperature rise. The junction temperature will be low, even if the power dissipation is high, when the mounting of the device has good thermal conductivity. When mounted on the recommended mounting pad the power dissipation for the SOT-23 package is 400mW. For operation above 25°C derate the power dissipation at 3.2 mW/°C. To determine the power dissipation for shutdown when mounted, attach the device on the PCB and increase the input-to-output voltage until the thermal protection circuit is activated. Calculate the power dissipation of the device by subtracting the output voltage from the input voltage and multiply by the output current. The measurements should allow for the ambient temperature of the PCB. The value obtained from PD/(150°C - TA) is the derating factor. The PCB mounting pad should provide maximum thermal conductivity in order to maintain low device temperatures. As a general rule, the lower the temperature, the better the reliability of the device.
The thermal resistance when the device is mounted is equal to:
TJ = θJA x PD + TA
The internal limit for junction temperature is 150°C. If the ambient temperature is 25°C, then:
150°C = θJA x PD + 25°C
θJA = 125°C/ PD
A simple way to determine PD is to calculate Vin x Iin when the output is shorted. As the temperature rises, the input gradually will decrease. The PD value obtained when the thermal equilibrium is reached, is the value that should be used.
The maximum operating current is:
Iout = ΔPD/(VIN(MAX) - VO)

The range of usable currents can be found from the graph in figure 2.
Procedure:
1. Find PD.
2. PD1 is calculated as PD x (0.8 - 0.9).
3. Plot PD1 against 25°C.
4. Connect PD1 to the point corresponding to the 150°C.


External Capacitors
The SMS112 series require input and output decoupling capacitors. The required value of these capacitors depends on the application circuit and other factors. Because high frequency characteristics of electrolytic capacitors depend greatly on the type and even the manufacturer, the value
of capacitance that works well with SMS112 for one brand or type may not necessary be sufficient with an electrolytic of different origin. Sometimes actual bench testing will be the only means to determine the proper capacitor type and value. To obtain stability in all general applications a high quality 4.7mF aluminum electrolytic or a 2.2mF tantalum electrolytic can be used.
A critical characteristic of the electrolytic capacitors is their performance over temperature. The SMS112 is designed to operate to -30°C, but some electrolytics will freeze around -30°C therefore becoming ineffective. In such case the result is oscillation at the regulator output. For all application circuits where cold operation is necessary, the output capacitor must be rated to operate at the minimum temperature.
In order to determine the minimum value of the output capacitor, for an application circuit, the entire circuit including the capacitor should be bench tested at minimum operating temperatures and maximum operating currents. After the minimum capacitance value has been found, the value should be doubled for actual use to cover for production variations both in the regulator and the capacitor. The recommended minimum capacitance for SMS112 is 2.2mF. As a general rule, with higher output voltages the value of the output capacitance decreases, since the internal loop gain is reduced.

Noise Bypass Capacitor
The noise bypass capacitor should be connected as close as possible to pin 3 and ground. The recommended value for this capacitor is 0.01mF. The noise bypass terminal is susceptible to external noise, and oscillation can occur when the bypass capacitor is not used and the solder pad for this pin is too large.
Because of the high impedance of the noise bypass terminal, care should be taken if the bypass capacitor is not used.

Pinout
Figure 1: Pinout
Power Dissipation
Figure 2: Power Dissipation

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.

STANDARD PRODUCTS ORDERING INFORMATION

SMS P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($)
SMS112-BD -WP 1000 -FF 1000
SMS112-BD -WP 5000 -FF 5000

PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.
LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times.
CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met.
CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page.
SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.
ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts.
SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

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