Matching pair transistors: SMSLS3550A MONOLITHIC DUAL PNP TRANSISTORS same as Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A TO71 Linear Integrated Systems LS3550A manufactured by Semiconix Semiconductor - Gold chip technology for known good Matching pair transistors die, Matching pair transistors flip chip, Matching pair transistors die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Matching pair transistors: SMSLS3550A MONOLITHIC DUAL PNP TRANSISTORS same as Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A TO71 Linear Integrated Systems LS3550A manufactured by Semiconix Semiconductor - Gold chip technology for known good Matching pair transistors die, Matching pair transistors flip chip, Matching pair transistors die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. TO71 Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A Linear Integrated Systems LS3550A,SMSLS3550A,Dual PNP,,Matching pair transistors, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire Matching pair transistors: SMSLS3550A MONOLITHIC DUAL PNP TRANSISTORS same as Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A TO71 Linear Integrated Systems LS3550A manufactured by Semiconix Semiconductor - Gold chip technology for known good Matching pair transistors die, Matching pair transistors flip chip, Matching pair transistors die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Matching pair transistors: SMSLS3550A MONOLITHIC DUAL PNP TRANSISTORS same as Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A TO71 Linear Integrated Systems LS3550A manufactured by Semiconix Semiconductor - Gold chip technology for known good Matching pair transistors die, Matching pair transistors flip chip, Matching pair transistors die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. TO71 Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A Linear Integrated Systems LS3550A,SMSLS3550A,Dual PNP,,Matching pair transistors, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire /images/watermark.gif);background-position: center center;background-repeat: repeat-y;"> REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=SMSLS3550A">INVENTORY /cgi-bin/rfq.cgi?site=&rows=1&item_1=SMSLS3550A-nDFN&c_item_1=MONOLITHIC%20DUAL%20PNP%20TRANSISTORS nDFN-6L">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=&rows=1&item_1=SMSLS3550A-nDFN&c_item_1=MONOLITHIC%20DUAL%2 0PNP%20TRANSISTORS nDFN-6L">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMSLS3550A - nanoDFN GOLD CHIP TECHNOLOGY™ TO71 MONOLITHIC DUAL PNP TRANSISTORS FEATURES APPLICATIONS MONOLITHIC DUAL PNP TRANSISTORS - nDFN Direct Replacement for Linear Integrated Systems LS3550A Series, Pin for Pin Compatible Extremely low broadband noise Improved performance of current mirror and differential amplifier circuits Drop-in replacement for standard double transistors Simplified board layout Eliminates the need for costly additional trimming Base-emitter voltage matching Current gain matching High reliability nanoDFN package Unique 10mils thin design Gold over nickel metallization RoHS compliant, Lead Free Compatible with surface mount, chip and wire and flip chip assembly process. Available packaged in TO71 Non-linear designs, multipliers, dividers, squaring circuits Logarithmic converters, amplifiers Voltage-controlled amplifiers Low-noise, low-drift instrumentation amplifiers Differential amplifiers Voltage references Current mirrors Comparators Thermometers Chip on Board System in package SIP Hybrid Circuits SMSLS3550A LS3550A MONOLITHIC DUAL PNP TRANSISTORS SMSLS3550A Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A Linear Integrated Systems LS3550A MONOLITHIC DUAL PNP TRANSISTORS MONOLITHIC DUAL PNP TRANSISTORS - PRODUCT DESCRIPTION Matched pair transistors ensure accurate base-emitter voltage (VBE1 / VBE2) and current gain (hFE1 / hFE2) matching and are fully internally isolated. As a replacement for standard double transistors in current mirror and differential amplifier applications, they eliminate the need for further costly trimming. They can also be used with an additional single or double transistor to deliver operational amplifier functionality at minimal product cost. Semiconix Matched Pair Transistors Complex Discrete Devices series are available in very thin 0201 nanoDFN package. These products are ideal for surface mount, hybrid circuits and multi chip module applications. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions. Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Parameter Symbol Value Unit Collector Current IC 50 mA Storage Temperature Range TSTG -65 to 200 °C Operating Temperature TOP -55 to 150 °C Power Dissipation PD 250 mW Collector to Collector Voltage 80 V Electrical Characteristics* TC = 25°C unless otherwise noted Name Symbol Test Conditions Value Unit Min. Typ. Max Collector-Emitter Breakdown Voltage V(BR)CBO IC= 10mA IE= 0 45 V Collector-Base Breakdown Voltage V(BR)CEO IC= 10mA IB= 0 45 V Emitter-Base Breakdown Voltage BVEBO IE= 10mA IC= 0 6.2 V Collector toCollector Voltage BVCCO IC= 10mA IE= 0 80 Collector-Cutoff Current ICBO IE= 0 VCB= 30V 0.2 nA Emitter Cut-off Current IEBO C= 0 VEB= 3V 0.2 nA DC Current Gain hFE IC= 1.0mA VCE= 5V 150 DC Current Gain hFE IC= 10mA VCE= 5V 120 DC Current Gain hFE IC= 100mA VCE= 5V 100 Collector-Emitter Saturation Voltage VCE(sat) IC= 100mA IB=10mA 0.25 V Current Gain - Bandwidth Product fT IC= 1mA VCE= 5V 600 MHz Output Capacitance Ccb IE= 0 VCB= -10V 2 pF Collector to Collector Leakage Current IC1C2 VCC=±80V 1 nA Noise Figure NF IC= 100mA VCE= 5V,BW= 200Hz, RB= 10 W,f=1KHz 3 dB Base Emitter Voltage Differential |VBE1-VBE2| IC= 10 mA VCE= 5V 2 mV Base Emitter Voltage Differential Change with Temperature Δ|(VBE1-VBE2)|/ΔT IC= 10 mA VCE= 5V,T= -40°C to +85°C 3 mV/°C Base Current Differential IB1-IB2| IC= 10 mA VCE= 5V 10 nA Base Current Differential Change With Temperature Δ(IB1-IB2)|/°C IC= 10 mA VCE= 5V,T= -40°C to +85°C 0.5 nA/°C DC Current Gain Differential hFE1/hFE2 IC= 10mA VCE= 5V 10 % SPICE MODEL CROSS REFERENCE PARTS: GENERAL DIE INFORMATION Substrate Thickness [mils] Package size Pads dimensions per drawing Backside Silicon 10±2 1.45x1.00mm [57.09x39.37mils] Gold Tin, Ni/Au, 5µm±1 thickness, solder reflow assembly Optional backside coating and/or marking. LAYOUT / DIMENSIONS / PAD LOCATIONS SMSLS3550A Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A Linear Integrated Systems LS3550A MONOLITHIC DUAL PNP TRANSISTORS nanoDFN 6 lead SMSLS3550A Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A Linear Integrated Systems LS3550A MONOLITHIC DUAL PNP TRANSISTORS TO71 Package pinout Pin # Function 1 C1 2 B1 3 E1 4 NC 5 E2 6 B2 7 C2 8 NC TO71 SMSLS3550A Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A Linear Integrated Systems LS3550A MONOLITHIC DUAL PNP TRANSISTORS nanoDFN SMSLS3550A Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A Linear Integrated Systems LS3550A MONOLITHIC DUAL PNP TRANSISTORS SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE SMX-nDFN - NanoDFN package is a very thin (10mils) proprietary wafer level chip size package W-CSP technology developed by Semiconix. SMX-nDFN is the most efficient wafer level chip size package W-CSP designed for mixed surface mount and flip chip applications. The assembly process is same as for packaged surface mount components. The process consist of at least 3 steps; -screen print solder paste on the printed circuit board; -flip chip, align and attach to the tacky solder paste; -dry paste, reflow at >220°C, clean, etc. SMX-nDFN packages can also be attached with conductive silver epoxy in low temperature applications. The assembly process is also very simple and inexpensive consisting of 3 steps: - transfer a thin conductive epoxy layer onto the bonding pads; -align to substrate and attach; -cure silver epoxy and inspect. SMX-nDFN packages are available in many sizes with landing pads compatible with the industry standard CSP as well as many surface mount packages. STANDARD PRODUCTS ORDERING INFORMATION VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) TAPE & REEL MIN QUANTITY U/P($) nDFN SMSLS3550A-nDFN -WP 10000 -TR 5700 nDFN SMSLS3550A-nDFN -WP 50000 -TR 28500 TO71 SMSLS3550A-TO71 -WP 1000 -TR 28500 PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice. LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times. CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met. CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMSLS3550A-nDFN&idx=96">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission.

REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP

   
semiconix semiconductor - where the future is today - gold chip technology SMSLS3550A - nanoDFN
GOLD CHIP TECHNOLOGY™ TO71 MONOLITHIC DUAL PNP TRANSISTORS

FEATURES APPLICATIONS MONOLITHIC DUAL PNP TRANSISTORS - nDFN
Direct Replacement for Linear Integrated Systems LS3550A Series, Pin for Pin Compatible
Extremely low broadband noise
Improved performance of current mirror and differential amplifier circuits
Drop-in replacement for standard double transistors
Simplified board layout
Eliminates the need for costly additional trimming
Base-emitter voltage matching
Current gain matching
High reliability nanoDFN package
Unique 10mils thin design
Gold over nickel metallization
RoHS compliant, Lead Free
Compatible with surface mount, chip and wire and flip chip assembly process.
Available packaged in TO71
Non-linear designs, multipliers, dividers, squaring circuits
Logarithmic converters, amplifiers
Voltage-controlled amplifiers
Low-noise, low-drift instrumentation amplifiers
Differential amplifiers
Voltage references
Current mirrors
Comparators
Thermometers
Chip on Board
System in package SIP
Hybrid Circuits
SMSLS3550A LS3550A MONOLITHIC DUAL PNP TRANSISTORS
SMSLS3550A Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A Linear Integrated Systems LS3550A MONOLITHIC DUAL PNP TRANSISTORS

MONOLITHIC DUAL PNP TRANSISTORS - PRODUCT DESCRIPTION
Matched pair transistors ensure accurate base-emitter voltage (VBE1 / VBE2) and current gain (hFE1 / hFE2) matching and are fully internally isolated. As a replacement for standard double transistors in current mirror and differential amplifier applications, they eliminate the need for further costly trimming. They can also be used with an additional single or double transistor to deliver operational amplifier functionality at minimal product cost.
Semiconix Matched Pair Transistors Complex Discrete Devices series are available in very thin 0201 nanoDFN package.
These products are ideal for surface mount, hybrid circuits and multi chip module applications.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS
Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Parameter Symbol Value Unit
Collector Current IC 50 mA
Storage Temperature Range TSTG -65 to 200 °C
Operating Temperature TOP -55 to 150 °C
Power Dissipation PD 250 mW
Collector to Collector Voltage 80 V

Electrical Characteristics* TC = 25°C unless otherwise noted
Name Symbol Test Conditions Value Unit
Min. Typ. Max
Collector-Emitter Breakdown Voltage V(BR)CBO IC= 10mA IE= 0 45 V
Collector-Base Breakdown Voltage V(BR)CEO IC= 10mA IB= 0 45 V
Emitter-Base Breakdown Voltage BVEBO IE= 10mA IC= 0 6.2 V
Collector toCollector Voltage BVCCO IC= 10mA IE= 0 80
Collector-Cutoff Current ICBO IE= 0 VCB= 30V 0.2 nA
Emitter Cut-off Current IEBO C= 0 VEB= 3V 0.2 nA
DC Current Gain hFE IC= 1.0mA VCE= 5V 150
DC Current Gain hFE IC= 10mA VCE= 5V 120
DC Current Gain hFE IC= 100mA VCE= 5V 100
Collector-Emitter Saturation Voltage VCE(sat) IC= 100mA IB=10mA 0.25 V
Current Gain - Bandwidth Product fT IC= 1mA VCE= 5V 600 MHz
Output Capacitance Ccb IE= 0 VCB= -10V 2 pF
Collector to Collector Leakage Current IC1C2 VCC=±80V 1 nA
Noise Figure NF IC= 100mA VCE= 5V,BW= 200Hz, RB= 10 W,f=1KHz 3 dB
Base Emitter Voltage Differential |VBE1-VBE2| IC= 10 mA VCE= 5V 2 mV
Base Emitter Voltage Differential Change with Temperature Δ|(VBE1-VBE2)|/ΔT IC= 10 mA VCE= 5V,T= -40°C to +85°C 3 mV/°C
Base Current Differential IB1-IB2| IC= 10 mA VCE= 5V 10 nA
Base Current Differential Change With Temperature Δ(IB1-IB2)|/°C IC= 10 mA VCE= 5V,T= -40°C to +85°C 0.5 nA/°C
DC Current Gain Differential hFE1/hFE2 IC= 10mA VCE= 5V 10 %
SPICE MODEL
Spice model pending.
CROSS REFERENCE PARTS: Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Package size Pads dimensions per drawing Backside
Silicon 10±2 1.45x1.00mm
[57.09x39.37mils]
Gold Tin, Ni/Au, 5µm±1 thickness, solder reflow assembly Optional backside coating and/or marking.

LAYOUT / DIMENSIONS / PAD LOCATIONS
SMSLS3550A Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A Linear Integrated Systems LS3550A MONOLITHIC DUAL PNP TRANSISTORS nanoDFN 6 lead SMSLS3550A Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A Linear Integrated Systems LS3550A MONOLITHIC DUAL PNP TRANSISTORS
TO71 Package pinout
Pin # Function
1 C1
2 B1
3 E1
4 NC
5 E2
6 B2
7 C2
8 NC
TO71 SMSLS3550A Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A Linear Integrated Systems LS3550A MONOLITHIC DUAL PNP TRANSISTORS
nanoDFN SMSLS3550A Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A, Linear Integrated Systems LS3550A Linear Integrated Systems LS3550A MONOLITHIC DUAL PNP TRANSISTORS

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
SMX-nDFN - NanoDFN package is a very thin (10mils) proprietary wafer level chip size package W-CSP technology developed by Semiconix.
SMX-nDFN is the most efficient wafer level chip size package W-CSP designed for mixed surface mount and flip chip applications. The assembly process is same as for packaged surface mount components. The process consist of at least 3 steps; -screen print solder paste on the printed circuit board; -flip chip, align and attach to the tacky solder paste; -dry paste, reflow at >220°C, clean, etc.
SMX-nDFN packages can also be attached with conductive silver epoxy in low temperature applications. The assembly process is also very simple and inexpensive consisting of 3 steps: - transfer a thin conductive epoxy layer onto the bonding pads; -align to substrate and attach; -cure silver epoxy and inspect. SMX-nDFN packages are available in many sizes with landing pads compatible with the industry standard CSP as well as many surface mount packages.

STANDARD PRODUCTS ORDERING INFORMATION

VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) TAPE & REEL MIN QUANTITY U/P($)
nDFN SMSLS3550A-nDFN -WP 10000 -TR 5700
nDFN SMSLS3550A-nDFN -WP 50000 -TR 28500
TO71 SMSLS3550A-TO71 -WP 1000 -TR 28500

PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.
LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times.
CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met.
CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page.
SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.
ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts.
SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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© 1990-2019 SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission.