SMXP2N2907A PNP Epitaxial Silicon Transistor same as ON Semiconductor P2N2907A manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor


semiconix semiconductor - where the future is today - gold chip technology SMXP2N2907A
GOLD CHIP TECHNOLOGY™ PNP Epitaxial Silicon Transistor

FEATURES APPLICATIONS Bipolar Silicon Transistors - nanoSOT
High reliability nanoSOT package
Unique 10mils thin design
Gold over nickel metallization
RoHS compliant, Lead Free
Compatible with surface mount, chip and wire and flip chip assembly process.
Chip on Board
System in package SIP
Hybrid Circuits
Automotive, Biotechnology, Computers, Military, Medical, MEMS, Optoelectronics, Space, Telecommunications
Smart Cards, RFID, PDA, Laptops, Mobile phones
SMXP2N2907A P2N2907A PNP Epitaxial Silicon Transistor

Semiconix Semiconductor PNP low power transistors series are designed to be used in a wide variety of digital and analog functions, including amplification, switching, voltage regulation, signal modulation, and oscillators. Semiconix Semiconductor PNP low power transistors series are available as discrete devices or as part of a hybrid integrated circuit (complex devices) packaged in a very small area.
Semiconix Semiconductor transistors series may be used in many applications as hybrid Circuits, automotive, biotechnology, computers, military, medical, MEMS, optoelectronics, space, telecommunications, smart cards, RFID, PDA, laptops and mobile phones.
PNP low power transistors remain the devices that excels in some applications, such as discrete circuit design, due to the very wide selection of PNP low power transistors types available, and because of their high transconductance and output resistance compared to MOSFETs. The PNP low power transistor is also the choice for demanding analog circuits, especially for very-high-frequency applications, such as radio-frequency circuits for wireless systems. Because of the known temperature and current dependence of the forward-biased base-emitter junction voltage, the PNP can be used to measure temperature by subtracting two voltages at two different bias currents in a known ratio. Since base-emitter voltage varies as the log of the base-emitter and collector-emitter currents, PNP low power transistors can also be used to compute logarithms and anti-logarithms.
Semiconix PNP low power transistors series are available in very thin nanoSOT, common surface mount SOT like and through hole TO style packages.
These products are ideal for surface mount, hybrid circuits and multi chip module applications.

COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.

Absolute Maximum Ratings * Ta = 25C unless otherwise noted
Name Symbol Value Unit
Collector-Base Voltage VCBO 60.00 V
Collector-Emitter Voltage VCEO 60.00 V
Emitter-Base Voltage VEBO 5.00 V
Collector Current IC 600.00 mA
Storage Temperature Range TSTG -55.00 C
Junction Temperature TJ 150.00 C
Collector Power Dissipation PC 625.00 mW

Electrical Characteristics* TC = 25C unless otherwise noted
Name Symbol Test conditions Min. Typ. Max. Unit
Collector-Emitter Breakdown Voltage V(BR)CBO IC = -10mA, IE = 0 60.00 V
Collector-Base Breakdown Voltage V(BR)CEO IC = 10 mA, IB = 0 60.00 V
Emitter-Base Breakdown Voltage BVEBO IC = -10mA, IC = 0 5.00 V
Collector-Cutoff Current ICBO1 VCB = 50 V 10.00 nA
Collector-Cutoff Current ICBO2 VCB = -50 Vdc, IE = 0, TA =150C -10.00 m Adc
Emitter Cut-off Current IEBO VEB = 30 V 50.00 nA
DC Current Gain hFE1 (IC = -0.1 mAdc, VCE = -10 Vdc) 75.00
DC Current Gain hFE2 (IC = -1.0 mAdc, VCE = -10 Vdc) 100.00
DC Current Gain hFE3 (IC = -10 mAdc, VCE = -10 Vdc) 100.00
DC Current Gain hFE4 (IC = -150 mAdc, VCE = -10 Vdc) (Note 1) 100.00 300.00
DC Current Gain hFE5 (IC = -500 mAdc, VCE = -10 Vdc) (Note 1) 50.00
Collector-Emitter Saturation Voltage VCE(sat)1 IC = 150 mA, IB = 15 mA 0.40 V
Collector-Emitter Saturation Voltage VCE(sat)2 (IC = -500 mAdc, IB = -50 mAdc) 1.60 V
Base-Emitter Saturation Voltage VBE (sat)1 IC = 150 mA, IB = 15 mA* 1.30 V
Base-Emitter Saturation Voltage VBE (sat)2 (IC = -500 mAdc, IB = -50 mAdc) 2.60 V
Current Gain - Bandwidth Product fT (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) 200.00 MHz
Output Capacitance Ccb VCB = -10 Vdc, IE= 0, f = 1.0 MHz 8.00 pF
Input Capacitance Cibo VEB = -2.0 Vdc, IC= 0, f = 1.0 MHz 30.00 pF
Delay Time td VCC = -30 Vdc, IC = -150 mAdc, B1 = -15 mAdc 10.00 ns
Rise Time tr VCC = -30 Vdc, IC = -150 mAdc, B1 = -15 mAdc 40.00 ns
Storage Time ts V CC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = 15 mAdc 80.00 ns
Fall Time tf V CC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = 15 mAdc 30.00 ns
Turn On Time tON1 VCC = -30 Vdc, IC = -150 mAdc, B1 = -15 mAdc 50.00 ns
Turn Off Time tOFF1 V CC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = 15 mAdc 110.00 ns

Substrate Thickness
Package size Pads dimensions per drawing Backside
Silicon 10±2 x mm
[ x mils]
Gold Tin, Ni/Au, 5µm±1 thickness, solder reflow assembly Optional backside coating and/or marking.

SMXP2N2907A ON Semiconductor P2N2907A PNP Epitaxial Silicon Transistor nanoSOT SMXP2N2907A ON Semiconductor P2N2907A PNP Epitaxial Silicon Transistor
nanoSOT SMXP2N2907A ON Semiconductor P2N2907A PNP Epitaxial Silicon Transistor

SMX-nDFN - NanoDFN and SMX-nSOT - NanoSOT package are very thin (10mils) proprietary wafer level chip size packages W-CSP technology developed by Semiconix.
SMX-nDFN - NanoDFN and SMX-nSOT - NanoSOT are the most efficient wafer level chip size package W-CSP designed for mixed surface mount and flip chip applications. The assembly process is same as for packaged surface mount components. The process consist of at least 3 steps; -screen print solder paste on the printed circuit board; -flip chip, align and attach to the tacky solder paste; -dry paste, reflow at >220°C, clean, etc.
SMX-nDFN - NanoDFN and SMX-nSOT - NanoSOT packages can also be attached with conductive silver epoxy in low temperature applications. The assembly process is also very simple and inexpensive consisting of 3 steps: - transfer a thin conductive epoxy layer onto the bonding pads; -align to substrate and attach; -cure silver epoxy and inspect. SMX-nDFN - NanoDFN and SMX-nSOT - NanoSOT packages are available in many sizes with landing pads compatible with the industry standard CSP as well as many surface mount packages.


nSOT SMXP2N2907A-nSOT -WP 10000 - -TR - -
nSOT SMXP2N2907A-nSOT -WP 50000 - -TR - -

PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.
LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times.
CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met.
CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page.
SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.
ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts.
SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF.

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DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.


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